BAX12

BAX12

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BAX12 - CONTROLLED AVALANCHE DIODES - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
BAX12 数据手册
Certificate TH97/10561QM Certificate TW00/17276EM BAX12, BAX12A FEATURES : * Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetitive peak reverse voltage: max. 90V * Repetitive peak forward current: max.800 mA * Repetitive peak reverse current: max.600mA * Pb / RoHS Free CONTROLLED AVALANCHE DIODES DO - 35 0.079(2.0 )max. 1.00 (25.4) min. MECHANICAL DATA : * Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.13 gram (approximately) 0.020 (0.52)max. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS Parameter Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Current Square wave: Tj = 25 °C prior to surge Total Power Dissipation , Ta = 25 °C Repetitive Peak Reverse Current Junction Temperature Storage Temperature Range Note : (1) Device mounted on an FR4 printed circuit-board; lead length 10 mm. Symbol VRRM VR IF IFRM t = 1 μs t = 100 μs t = 10 ms IFSM Ptot IRRM TJ TS Value 90 90 400 800 55 15 9 450 600 200 -65 to + 200 Unit V V mA A A mW mA °C °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Reverse Avalanche Breakdown Voltage Reverse Current Forward Voltage Diode Capacitance Reverse Recovery Time BAX12 BAX12A Symbol V(BR)R IR VF Cd Trr Test Condition IR = 1mA IR = 0.1mA VR = 90 V VR = 90 V, Tj = 150 °C IF = 400 mA f = 1MHz ; VR = 0 IF = 30mA , IR = 30mA RL = 100 Ω measured at IR = 3 mA Min. 120 120 - Max. 170 170 100 100 1.25 35 50 Unit V V nA μA V pF ns Page 1 of 2 Rev. 01 : October 15, 2007 Certificate TH97/10561QM Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES ( BAX12, BAX12A ) Fig.1 - Maximum permissible continuous forward current as a function of ambient temperature. Fig.2 - Forward current as a function of forward voltage. (1) Tj = 175°C; typical values. (2) Tj = 25°C; typical values. (3) Tj = 25°C; maximum values. Device mounted on an FR4 printed circuit board; lead length 10mm. Fig.3 - Reverse current as a function of junction temperature. Fig.4 - Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj = 25 VR = 90 . Solid line: maximum values. Dotted line: typical values. Fig.5 - Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj = 25 °C prior to surge. Page 2 of 2 Rev. 01 : October 15, 2007
BAX12
### 物料型号 - 型号:BAX12, BAX12A

### 器件简介 可控雪崩二极管,用于电路中以控制电压和电流的雪崩击穿特性。

### 引脚分配 - 引脚:轴向引脚,可焊接,符合MIL-STD-202标准。 - 极性:色环表示阴极端。

### 参数特性 - 开关速度:最大50纳秒 - 最大连续反向电压:90V - 最大重复峰值反向电压:90V - 最大重复峰值正向电流:800mA - 最大重复峰值反向电流:600mA - 无铅/RoHS:符合

### 功能详解 - 反向雪崩电压:在1mA电流下,BAX12和BAX12A的电压范围为120至170伏。 - 正向电压:在90V反向电压和150°C结温下,400mA正向电流时,正向电压范围为1.25至1伏。 - 二极管电容:在30mA正向电流和反向电流下,电容为35皮法。

### 应用信息 适用于需要快速开关和高反向电压的电路,如电源、信号处理等。

### 封装信息 - 封装:DO-35玻璃封装 - 重量:约0.13克
BAX12 价格&库存

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