BR1506W

BR1506W

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BR1506W - SILICON BRIDGE RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
BR1506W 数据手册
BR1500W - BR1510W PRV : 50 - 1000 Volts Io : 15 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS BR50W 0.732 (18.6) 0.692 (17.5) 1.130 (28.7) 1.120 (28.4) 0.470 (11.9) 0.430 (10.9) 0.21 (5.3) 0.20 (5.1) * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency * Weight : 15.95 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.042 (1.06) 0.038 (0.96) 1.2 (30.5) MIN. 0.310 (7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 7.5 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : Ta = 25 °C Ta = 100 °C SYMBOL BR 1500W 50 35 50 BR 1501W 100 70 100 BR 1502W 200 140 200 BR 1504W 400 280 400 15 300 375 1.1 10 200 1.9 - 40 to + 150 - 40 to + 150 BR 1506W 600 420 600 BR 1508W 800 560 800 BR 1510W 1000 700 1000 UNIT V V V A A A2 S V µA µA °C/W °C °C VRRM VRMS VDC I F(AV) IFSM I 2t VF IR IR(H) RθJC TJ TSTG 1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate Page 1 of 2 Rev. 02 : March 24, 2005 R ATING AND CHARACTERISTIC CURVES ( BR1500W - BR1510W ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 18 HEAT-SINK MOUNTING, Tc 5" x 4" x 3" THK. (12.7cm x 12.7cm x 7.3cm ) Al.-Finned plate FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 15 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES 250 12 200 T J = 50 ° C 9 150 6 100 3 50 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE 10 PER DIODE T J = 1 00 ° C FORWARD CURRENT, AMPERES 10 1.0 Pulse W idth = 300 µs 1 % Duty Cycle 1.0 0.1 T J = 25 °C T J = 25 ° C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 R ev. 02 : March 24, 2005
BR1506W
1. 物料型号: - BR1500W - BR1510W - BR50W

2. 器件简介: 这些是硅桥式整流器,具有高电流能力、高浪涌电流能力、高可靠性、低反向电流和低正向电压降,非常适合用于印刷电路板,且不含铅和镉,符合RoHS标准。

3. 引脚分配: 根据文档描述,这些器件具有镀锡引脚,可按照MIL-STD-202标准方法208进行焊接,并标有极性符号。

4. 参数特性: - 最大重复峰值反向电压(VRRM):50-1000伏不等,具体取决于型号。 - 最大RMS电压(VRMS):35-700伏不等。 - 最大直流阻断电压(VDc):50-1000伏不等。 - 最大平均正向电流(IF(AV)):在55°C时,部分型号为15安培。 - 正向浪涌电流(IFSM):部分型号为300安培。 - 最大正向电压每二极管(VF):在7.5安培时为1伏。 - 最大直流反向电流(IR):在25°C时为10微安培,在100°C时为200微安培。

5. 功能详解: 这些整流器适用于单相、半波、60赫兹的电阻性或感性负载。对于容性负载,电流需减20%。它们具有从结到外壳的典型热阻(ROJC)为1.9°C/W,工作结温范围为-40至+150°C,存储温度范围也为-40至+150°C。

6. 应用信息: 这些整流器适用于需要高电流和高可靠性的应用场合,特别是在印刷电路板中。

7. 封装信息: 封装为模塑塑料,易于安装在桥式封装中。外壳材料为UL94V-0级阻燃环氧树脂。器件需通过硅脂安装在散热器上,以实现最大的热传递效率,重量为15.95克。
BR1506W 价格&库存

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