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BR2500

BR2500

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BR2500 - SILICON BRIDGE RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
BR2500 数据手册
BR2500 - BR2510 PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON BRIDGE RECTIFIERS BR50 0.728(18.50) 0.688(17.40) 0.570(14.50) 0.530(13.40) 0.685(16.70) 1.130(28.70) 0.618(15.70) 1.120(28.40) * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams 0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) 0.210(5.30) 0.200(5.10) 0.252(6.40) 0.248(6.30) φ 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0) 0.310(7.87) 0.280(7.11) Metal Heatsink Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 12.5 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : Ta = 25 °C Ta = 100 °C SYMBOL BR2500 BR2501 BR2502 BR2504 BR2506 BR2508 BR2510 UNIT V V V A A A2S V VRRM VRMS 50 35 50 100 70 100 200 140 200 400 280 400 25 300 375 1.1 10 200 1.45 - 40 to + 150 - 40 to + 150 600 420 600 800 560 800 1000 700 1000 VDC IF(AV) IFSM I2t VF IR IR(H) RθJC TJ TSTG µA µA °C/W °C °C 1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( BR2500 - BR2510 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 30 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 25 250 20 200 T J = 50 ° C 15 150 10 HEAT-SINK MOUNTING, Tc 5" x 6" x 4.9" THK. (12.8cm x 15.2cm x 12.4cm) Al.-Finned plate 100 5 50 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE 10 PER DIODE T J = 100 ° C FORWARD CURRENT, AMPERES 10 1.0 Pulse W idth = 300 µs 1 % Duty Cycle 1.0 0.1 T J = 25 ° C T J = 25 ° C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
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