0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BR3508W

BR3508W

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BR3508W - SILICON BRIDGE RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
BR3508W 数据手册
BR3500W - BR3510W PRV : 50 - 1000 Volts Io : 35 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength SILICON BRIDGE RECTIFIERS BR50W 0.732 (18.6) 0.692 (17.5) 1.130 (28.7) 1.120 (28.4) 0.470 (11.9) 0.430 (10.9) 0.21 (5.3) 0.20 (5.1) * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency * Weight : 15.95 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.042 (1.06) 0.038 (0.96) 1.2 (30.5) MIN. 0.310 (7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 17.5 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL BR BR BR BR BR BR BR 3500W 3501W 3502W 3504W 3506W 3508W 3510W 50 35 50 100 70 100 200 140 200 400 280 400 35 400 660 1.1 10 200 1.5 10 - 40 to + 150 - 40 to + 150 600 420 600 800 560 800 1000 700 1000 UNITS V V V A A A2 S V VRRM VRMS VDC IF(AV) IFSM I2t VF IR IR(H) RθJC RθJA TJ TSTG µA mA °C/W °C/W °C °C Typical Thermal Resistance at Junction to Case ( Note 1 ) Typical Thermal Resistance at Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Notes : 1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( BR3500W THRU BR3510W ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 42 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 600 AVERAGE FORWARD OUTPUT CURRENT AMPERES 35 500 28 400 T J = 50 °C 21 300 14 HEAT-SINK MOUNTING, Tc 7.5" x 3.5" x 4.6" THK. (19cm x 9cm x 11.8cm) Al.-Finned plate 0 25 50 75 100 125 150 175 200 7 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 1 2 4 6 10 20 40 60 100 0 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 10 1.0 1.0 Pulse Width = 300 µs 1 % Duty Cycle 0.1 TJ = 25 °C TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
BR3508W 价格&库存

很抱歉,暂时无法提供与“BR3508W”相匹配的价格&库存,您可以联系我们找货

免费人工找货