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BR5000W

BR5000W

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BR5000W - SILICON BRIDGE RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
BR5000W 数据手册
BR5000W - BR5010W PRV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength SILICON BRIDGE RECTIFIERS BR50W 0.732 (18.6) 0.692 (17.5) 1.130 (28.7) 1.120 (28.4) 0.470 (11.9) 0.430 (10.9) 0.21 (5.3) 0.20 (5.1) * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency * Weight : 15.95 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.042 (1.06) 0.038 (0.96) 1.2 (30.5) MIN. 0.310 (7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc=55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 25 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL BR 5000W BR 5001W BR 5002W BR 5004W BR 5006W BR 5008W BR 5010W UNIT VRRM VRMS VDC IF(AV) IFSM It VF IR IR(H) RθJC TJ TSTG 2 50 35 50 100 70 100 200 140 200 400 280 400 50 400 664 1.1 10 200 1.0 600 420 600 800 560 800 1000 700 1000 V V V A A AS V µA µA °C/W °C °C 2 Typical Thermal Resistance at Junction to Case ( Note 1 ) Operating Junction Temperature Range Storage Temperature Range - 40 to + 150 - 40 to + 150 Notes : 1 ) Thermal resistance from Junction to Case with units mounted on heat sink. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( BR5000W - BR5010W ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 60 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 600 AVERAGE FORWARD OUTPUT CURRENT AMPERES 50 500 40 400 T J = 50 °C 30 300 20 200 10 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 T J = 100 ° C FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 10 Pulse W idth = 300 µs 1 % Duty Cycle 1.0 1.0 0.1 T J = 25 ° C T J = 25 ° C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
BR5000W
1. 物料型号: - BR5000W、BR5001W、BR5002W、BR5004W、BR5006W、BR5008W、BR5010W。

2. 器件简介: - 这些器件是硅桥式整流器,具有高电流能力、高浪涌电流能力、高可靠性、低反向电流、低正向电压降、高机箱介电强度,并且不含铅/符合RoHS标准。

3. 引脚分配: - 引脚为镀铅可焊性引脚,符合MIL-STD-202标准,引脚极性符号标记在外壳上。

4. 参数特性: - 最大重复峰值反向电压(VRRM):50-1000伏不等。 - 最大RMS电压(VRMS):35-700伏不等。 - 最大直流阻断电压(VDc):50-1000伏不等。 - 最大平均正向电流(IF(AV)):在55°C时,某些型号可达50安培。 - 正向浪涌电流(IFSM):某些型号可达400安培。 - 正向电压每二极管在IF=25A时(VF):1.1伏。 - 最大直流反向电流(IR):在25°C时,某些型号为10毫安,在100°C时为200毫安。

5. 功能详解: - 这些整流器适用于单相、半波、60Hz的电阻性或感性负载。对于电容性负载,需要降低20%的电流。

6. 应用信息: - 这些硅桥式整流器适用于需要高电流和高可靠性的整流应用,特别是在电力电子领域。

7. 封装信息: - 封装为模塑塑料带有集成散热器,环氧树脂为UL94V-0级阻燃材料,螺栓固定在散热器上,使用硅脂热传导剂以获得最大的热传递效率。
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