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BR5010W

BR5010W

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BR5010W - SILICON BRIDGE RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
BR5010W 数据手册
BR5000W - BR5010W PRV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength SILICON BRIDGE RECTIFIERS BR50W 0.732 (18.6) 0.692 (17.5) 1.130 (28.7) 1.120 (28.4) 0.470 (11.9) 0.430 (10.9) 0.21 (5.3) 0.20 (5.1) * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency * Weight : 15.95 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.042 (1.06) 0.038 (0.96) 1.2 (30.5) MIN. 0.310 (7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc=55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 25 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL BR 5000W BR 5001W BR 5002W BR 5004W BR 5006W BR 5008W BR 5010W UNIT VRRM VRMS VDC IF(AV) IFSM It VF IR IR(H) RθJC TJ TSTG 2 50 35 50 100 70 100 200 140 200 400 280 400 50 400 664 1.1 10 200 1.0 600 420 600 800 560 800 1000 700 1000 V V V A A AS V µA µA °C/W °C °C 2 Typical Thermal Resistance at Junction to Case ( Note 1 ) Operating Junction Temperature Range Storage Temperature Range - 40 to + 150 - 40 to + 150 Notes : 1 ) Thermal resistance from Junction to Case with units mounted on heat sink. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( BR5000W - BR5010W ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 60 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 600 AVERAGE FORWARD OUTPUT CURRENT AMPERES 50 500 40 400 T J = 50 °C 30 300 20 200 10 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 T J = 100 ° C FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 10 Pulse W idth = 300 µs 1 % Duty Cycle 1.0 1.0 0.1 T J = 25 ° C T J = 25 ° C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
BR5010W
1. 物料型号: - BR5000W-B85010W

2. 器件简介: - 硅桥式整流器,具有高电流能力、高浪涌电流能力、高可靠性、低反向电流、低正向电压降、高机箱介电强度,并且不含铅/RoHS。

3. 引脚分配: - 根据文档中的描述,器件具有镀铅可焊的引脚,符合MIL-STD-202, Method 208标准。

4. 参数特性: - 包括最大重复峰值反向电压(VRRM)、最大RMS电压(VRMS)、最大直流阻断电压(VDc)、最大平均正向电流(IF(AV))、峰值正向浪涌电流(IFSM)、电流平方时间(12t)、最大正向电压每二极管(VF)、最大直流反向电流(IR)等。

5. 功能详解: - 该器件用于整流应用,具有高电流和高浪涌电流能力,同时保持低反向电流和低正向电压降,以提高效率。

6. 应用信息: - 适用于需要高电流和高可靠性整流的应用场合,如电源、电机驱动等。

7. 封装信息: - 封装为模塑塑料带散热片一体结构,具有UL94V-0级阻燃性能。
BR5010W 价格&库存

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