BR600 - BR610
PRV : 50 - 1000 Volts Io : 6.0 Amperes
SILICON BRIDGE RECTIFIERS
BR6
0.158 (4.00) 0.142 (3.60) 0.445 (11.30) 0.405 (10.30) AC
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board
0.62 (15.75) 0.58 (14.73) 0.127 (3.20) 0.047 (1.20) AC 0.042 (1.06) 0.038 (0.96) 0.75 (19.1) Min. 0.27 (6.9) 0.23 (5.8)
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.6 grams
Rating at 25 ° C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc=50°C Peak Forward Surge Current, Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at I F =3 A. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C
SYMBOL
BR600
BR601
BR602
BR604
BR606
BR608
BR610
UNIT V V V A
VRRM VRMS VDC IF(AV)
50 35 50
100 70 100
200 140 200
400 280 400 6.0
600 420 600
800 560 800
1000 700 1000
IFSM
200
A
It VF IR IR(H) Rθ JC TJ TSTG
2
64 1.0 10 200 8.0 - 40 to + 150 - 40 to + 150
AS V µA µA °C/W °C °C
2
Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range
Notes : 1. Thermal Resistance from junction to case with units mounted on a 2.6" x 1.4" x 0.06" THK (6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005
R ATING AND CHARACTERISTIC CURVES ( BR600 - BR610 )
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
6.0
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES
240
AVERAGE FORWARD OUTPUT CURRENT, AMPERES
5.0
200
4.0
160
T J = 50 °C
3.0
120
2.0
80
1.0
HEAT-SINK MOUNTING, Tc 2.6" x 1.4" x 0.06" THK. (6.5cm x 3.5cm x 0.15cm ) Al.-PLATE 0 25 50 75 100 125 150 175
40
8.3 m s S INGLE HALF SINE W A V E JEDEC METHOD
0
0 1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( ° C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE
10
T J = 1 00 ° C
FORWARD CURRENT, AMPERES
10
1.0
1.0
Pulse W idth = 300 µ s 1 % Duty Cycle
0.1
T J = 25 °C
T J = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE V OLTAGE, (%)
0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
P age 2 of 2
R ev. 02 : March 24, 2005
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