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BR610

BR610

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BR610 - SILICON BRIDGE RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
BR610 数据手册
BR600 - BR610 PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS BR6 0.158 (4.00) 0.142 (3.60) 0.445 (11.30) 0.405 (10.30) AC 0.62 (15.75) 0.58 (14.73) 0.127 (3.20) 0.047 (1.20) AC MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.6 grams Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.042 (1.06) 0.038 (0.96) 0.75 (19.1) Min. 0.27 (6.9) 0.23 (5.8) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc=50°C Peak Forward Surge Current, Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF =3 A. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL BR600 BR601 BR602 BR604 BR606 BR608 BR610 UNITS Volts Volts Volts Amps. VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 400 280 400 6.0 600 420 600 800 560 800 1000 700 1000 IFSM I2t VF IR IR(H) RθJC TJ TSTG 200 64 1.0 10 200 8.0 - 40 to + 150 - 40 to + 150 Amps. A2S Volts µA µA °C/W °C °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : 1. Thermal Resistance from junction to case w ith units mounted on a 2.6" x 1.4" x 0.06" THK (6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink. UPDATE : APRIL 23, 1998 RATING AND CHARACTERISTIC CURVES ( BR600 - BR610 ) AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 6.0 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 240 5.0 200 4.0 160 TJ = 50 ° C 3.0 120 2.0 80 1.0 HEAT-SINK MOUNTING, Tc 2.6" x 1.4" x 0.06" THK. (6.5cm x 3.5cm x 0.15cm) Al.-PLATE 0 25 50 75 100 125 150 175 40 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz PER DIODE 100 REVERSE CURRENT, MICROAMPERES FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 FORWARD CURRENT, AMPERES TJ = 100 ° C 10 1.0 1.0 Pulse Width = 300 µ s 1 % Duty Cycle 0.1 TJ = 25 ° C TJ = 25 ° C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS
BR610 价格&库存

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SBR6100CTL-13
  •  国内价格
  • 1+1.35675
  • 10+1.26525
  • 50+1.128
  • 150+1.0365
  • 300+0.97245
  • 500+0.945

库存:2185