BR806

B R800 - BR810 PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * * * * * * H igh current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS BR10 0.520 (13.20) 0.480 (12.20) 0.158 (4.00) 0.142 (3.60) AC 0.77 (19.56) 0.73 (18.54) 0.290 (7.36) 0.210 (5.33) AC 0.052 (1.32) 0.048 (1.22) 0.75 (19.1) Min. 0.30 (7.62) 0.25 (6.35) * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.1 grams Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc=50 ° C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 4.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : Ta = 25 ° C Ta = 100 ° C SYMBOL BR800 BR801 BR802 BR804 BR806 BR808 BR810 50 35 50 100 70 100 200 140 200 400 280 400 8.0 300 160 1.0 10 200 2.5 - 40 to + 150 - 40 to + 150 600 420 600 800 560 800 1000 700 1000 UNIT V V V A A A 2S V µA µA V RRM V RMS VDC IF(AV) I FSM It VF IR I R(H) R θ JC TJ TSTG 2 °C/W °C °C 1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink. Page 1 of 2 R ev. 02 : March 24, 2005 R ATING AND CHARACTERISTIC CURVES ( BR800 - BR810 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 12 HEAT-SINK MOUNTING, Tc 3.2" x 3.2" x 0.12" THK. (8.2cm x 8.2cm x 0.3cm ) Al.-PLATE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 300 AVERAGE FORWARD OUTPUT CURRENT AMPERES 10 250 8 200 T J = 50 °C 6 150 4 100 2 50 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE 10 T J = 1 00 ° C FORWARD CURRENT, AMPERES 10 Pulse W idth = 300 µs 1 % Duty Cycle 1.0 1.0 0.1 T J = 25 °C T J = 25 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS P age 2 of 2 R ev. 02 : March 24, 2005