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BY298

BY298

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BY298 - FAST RECOVERY RECTIFIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
BY298 数据手册
BY296 - BY299 PRV : 100 - 800 Volts Io : 2.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency FAST RECOVERY RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.375 (9.52) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.16 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C SYMBOL VRRM VRMS VDC IF(AV) BY296 100 70 100 BY297 200 140 200 2.0 BY298 400 280 400 BY299 800 560 800 UNIT V V V A Peak Forward Surge Current, 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 2.0 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C IFSM VF IR IR(H) Trr CJ TJ TSTG 70 1.3 10 500 250 28 - 50 to + 125 - 50 to + 150 A V µA µA ns pf °C °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : Apr. 2, 2002 RATING AND CHARACTERISTIC CURVES ( BY296 - BY299 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 A D.U.T. 50 Vdc (approx.) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 A Trr + - 1.0 A SET TIME BASE FOR 50-100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 cm FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 2.5 100 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C AVERAGE FORWARD OUTPUT CURRENT, AMPERES 2.0 80 1.5 60 1.0 40 0.5 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 20 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 10 TJ = 100 °C FORWARD CURRENT, AMPERES Pulse W idth = 300 µs 2% Duty Cycle TJ = 25 °C 10 1.0 1.0 0.1 TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 01 : Apr. 2, 2002
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