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BYD17G

BYD17G

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BYD17G - GENERAL PURPOSE CONTROLLED AVALANCHE RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
BYD17G 数据手册
Certificate TH97/10561QM Certificate TW00/17276EM BYD17D - BYD17M PRV : 200 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability * Smallest surface mount rectifier outline * Pb / RoHS Free GENERAL PURPOSE CONTROLLED AVALANCHE RECTIFIERS MELF (Plastic) Cathode Mark φ 0.102 (2.6) 0.094 (2.4) 0.022(0.55) 0.205(5.2) 0.189(4.8) Dimensions in inches and ( millimeters ) MECHANICAL DATA : * Case : Molded plastic * Terminals : Plated Terminals, solderable per MIL-STD-750 Method 2026 * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.116 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum Crest Working Reverse Voltage Maximum Continuous Reverse Voltage Min. Reverse Avalanche Breakdown Voltage at IR = 0.1 mA Maximum Average Forward Current (Note 1) Maximum Forward Voltage Maximum Reverse Current Ttp = 105 °C Ta = 65 °C; PCB mounting at I F = 1 A , Tj = 25 °C at I F = 1 A , Tj = Tjmax at VR = VRRMmax , Tj = 25 °C at VR = VRRMmax , Tj = 165 °C Typical Reverse Recovery Time (Note 3) Thermal Resistance from Junction to Tie-Point Thermal Resistance from Junction to Ambient (Note 4) Operating Junction Temperature Range Storage Temperature Range (Tj = 25 °C unless otherwise specified.) SYMBOL VRRM VRWM VR V(BR)R-min IF(AV) IFSM VF IR IR(H) Trr Rth j-tp Rth j-a TJ TSTG BYD 17D 200 200 200 225 BYD 17G 400 400 400 450 BYD 17J 600 600 600 650 1.5 0.6 20 1.05 0.93 1.0 100 3 30 150 BYD 17K 800 800 800 900 BYD 17M 1000 1000 1000 1100 UNIT V V V V A A V μA μA μs K/W K/W °C °C Maximum Non-Repetitive Peak Forward Surge Current (Note 2) - 65 to + 175 - 65 to + 175 Notes : (1) Averaged over any 20 ms period. (2) t = 10ms half sine wave; Tj = Tjmax prior to surge; V = VRRMmax R (3) Reverse Recovery Test Conditions : I F = 0.5 A, IR = 1.0 A, Irr = 0.25 A. (4) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥ 40 μm Page 1 of 2 Rev. 02 : November 7, 2006 Certificate TH97/10561QM Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES ( BYD17D - BYD17M ) FIG.1 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF TIE-POINT TEMPERATURE FIG.2 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE AVERAGE FORWARD CURRENT, I F(AV) (A) AVERAGE FORWARD CURRENT, I F(AV) (A) 0 25 50 75 100 125 150 175 3.0 1.2 2.5 1.0 2.0 0.8 1.5 0.6 1.0 0.4 0.5 0 0.2 0 0 40 80 120 160 200 TIE-POINT TEMPERATURE, Ttp ( °C) AMBIENT TEMPERATURE, Ta ( °C) FIG.3 - FORWARD CURRENT AS FUNCTION OF FORWARD VOLTAGE; MAXIMUM VALUES 6 FIG.4 - REVERSE CURRENT AS FUNCTION OF JUNCTION TEMPERATURE; MAXIMUM VALUES 1000 VR =V RRMmax FORWARD CURRENT, I F (A) REVERSE CURRENT, IR (μA) 4 100 TJ = 175 °C 2 TJ = 25 °C 10 1 0 0 0 1 2 40 80 120 160 200 JUNCTION TEMPERATURE, T J ( °C) FORWARD VOLTAGE, V F (V) Page 2 of 2 Rev. 02 : November 7, 2006
BYD17G 价格&库存

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