BYD57GA

TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 BYD57DA - BYD57VA PRV : 200 - 1400 Volts Io : 1.0 - 1.2 Amperes FEATURES : * * * * * * Glass passivated junction chip High maximum operating temperature Low leakage current Excellent stability Smallest surface mount rectifier outline Pb / RoHS Free ULTRA-FAST SOFT-RECOVERY CONTROLLED AVALANCHE RECTIFIERS SMA (DO-214AC) 5.0 ± 0.15 4.5 ± 0.15 1.1 ± 0.3 1.2 ± 0.2 2.1 ± 0.2 2.6 ± 0.15 0.2 ± 0.07 MECHANICAL DATA : * * * * * * Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.067 gram 2.0 ± 0.2 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified RATING Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Min. Reverse Avalanche Breakdown Voltage @ I R = 0.1 mA Maximum Average Forward Current Maximum Non-Repetitive Peak Forward Surge Current (Note 3) Maximum Repetitive Peak Forward Current at Ttp = 85 °C Maximum Forward Voltage at IF = 1.0 A ; TJ = 25 °C Maximum Reverse Current at VR =VRRMmax Maximum Reverse Recovery Time (Note 4) Thermal Resistance from Junction to Tie-Point Thermal Resistance from Junction to Ambient (Note 5) Junction Temperature Range Storage Temperature Range TJ = 25 °C TJ = 165 °C SYMBOL VRRM VR V(BR)R-min IF(AV) IFSM IFRM VF IR IR(H) Trr Rth j-tp Rth j-a TJ TSTG BYD 57DA BYD 57GA BYD 57JA BYD BYD BYD BYD 57VA 57KA 57MA 57UA UNIT V V V A A 200 200 300 400 400 500 600 600 700 1.0 (1) 800 800 900 0.4 5 (2) 1000 1200 1400 1000 1200 1400 1100 1300 1500 1.2 (1) 8.5 3.6 5.0 100 30 30 150 - 65 to + 175 - 65 to + 175 75 11 2.3 A V μA μA 150 ns K/W K/W °C °C Notes : (1) Ttp = 85 °C; see Fig. 1and 2; averaged over any 20 ms period; see also Fig.5 and 6. (2) Tamb = 60 °C; PCB mounting ; see Fig. 3 and 4; averaged over any 20 ms period; see also Fig.5 and 6. (3) t=10ms half sine wave; Tj = Tjmax prior to surge; V R = VRRMmax (4) Reverse Recovery Test Conditions : IF = 0.5 A, I R = 1.0 A, Irr = 0.25 A. (5) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥ 40 μm. Page 1 of 3 Rev. 00 : February 13, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( BYD57DA - BYD57VA ) FIG.1 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF TIE-POINT TEMPERATURE 2.0 FIG.2 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF TIE-POINT TEMPERATURE 2.0 BYD57DA to MA BYD57UA to VA AVERAGE FORWARD CURRENT, IF(AV) (A) 1.2 AVERAGE FORWARD CURRENT, IF(AV) (A) 0 40 80 120 160 200 1.6 1.6 1.2 0.8 0.8 0.4 0.4 0 0 0 40 80 120 160 200 TIE-POINT TEMPERATURE, Ttp ( °C) FIG.3 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE AVERAGE FORWARD CURRENT, I F(AV) (A) 0.6 TIE-POINT TEMPERATURE, Ttp ( °C) FIG.4 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE AVERAGE FORWARD CURRENT, I F(AV) (A) 0.6 BYD57DA to MA 0.5 BYD57UA to VA 0.4 0.4 0.3 0.2 0.2 0.1 0 0 40 80 120 160 200 0 0 40 80 120 160 200 AMBIENT TEMPERATURE, Tamp ( °C) FIG.5 - MAXIMUM STEADY STATE POWER DISSIPATION AS A FUNCTION OF AVERAGE FORWARD CURRENT 3 AMBIENT TEMPERATURE, Tamp ( °C) FIG.6 - MAXIMUM STEADY STATE POWER DISSIPATION AS A FUNCTION OF AVERAGE FORWARD CURRENT 6 POWER DISSIPATION, P D (W) a =3 2.5 2 1.57 1.42 POWER DISSIPATION, P D (W) BYD57UA to VA 5 4 a =3 2.5 2 1.57 1.42 2 3 2 1 BYD57DA to MA a = IF(RMS)/IF(AV) ; VR = VRRMmax ; δ = 0.5 0 0 0.5 1 a = IF(RMS)/IF(AV) ; VR = VRRMmax ; δ = 0.5 0 0 0.4 0.8 1.2 1.6 2.0 AVERAGE FORWARD CURRENT, I F(AV) (A) AVERAGE FORWARD CURRENT, I F(AV) (A) Page 2 of 3 Rev. 00 : February 13, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( BYD57DA - BYD57VA ) FIG.7 - FORWARD CURRENT AS FUNCTION OF FORWARD VOLTAGE FIG.8 - FORWARD CURRENT AS FUNCTION OF FORWARD VOLTAGE 4 4 BYD57DA to MA BYD57UA to VA FORWARD CURRENT, I F (A) 3 FORWARD CURRENT, I F (A) TJ = 25 °C 3 TJ = 25 °C 2 2 1 1 0 0 2 4 6 8 0 0 1 2 3 4 FORWARD VOLTAGE, V F (V) FORWARD VOLTAGE, V F (V) FIG.9 - REVERSE CURRENT AS FUNCTION OF JUNCTION TEMPERATURE 1000 REVERSE CURRENT, IR (μA) 100 VR =VRRMmax 10 1 0 100 200 JUNCTION TEMPERATURE, TJ ( °C) Page 3 of 3 Rev. 00 : February 13, 2008