TH97/10561QM
TW00/17276EM
IATF 0060636 SGS TH07/1033
BYD77AA - BYD77GA
PRV : 50 - 400 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * Glass passivated junction chip High maximum operating temperature Low leakage current Excellent stability Smallest surface mount rectifier outline Pb / RoHS Free
ULTRA FAST LOW-LOSS CONTROLLED AVALANCHE RECTIFIERS
SMA (DO-214AC)
5.0 ± 0.15
4.5 ± 0.15
1.1 ± 0.3
1.2 ± 0.2 2.1 ± 0.2 2.6 ± 0.15
0.2 ± 0.07
MECHANICAL DATA :
* * * * * * Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.067 gram
2.0 ± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
RATING Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Min. Reverse Avalanche Breakdown Voltage @ I R = 0.1 mA Maximum Average Forward Current Maximum Non-Repetitive Peak Forward Surge Current (Note 3) Maximum Repetitive Peak Forward Current at Ttp = 105 °C Maximum Forward Voltage at IF = 1.0 A ; TJ = 25 °C Maximum Reverse Current at VR =VRRMmax Maximum Reverse Recovery Time (Note 4) Thermal Resistance from Junction to Tie-Point Thermal Resistance from Junction to Ambient (Note 5) Junction Temperature Range Storage Temperature Range TJ = 25 °C TJ = 165 °C
SYMBOL VRRM VR V(BR)R-min IF(AV) IFSM IFRM VF IR IR(H) Trr Rth j-tp Rth j-a TJ TSTG
BYD BYD BYD BYD BYD BYD BYD UNIT 77AA 77BA 77CA 77DA 77EA 77FA 77GA 50 50 55 100 100 110 2.0 0.85 15 0.98 1.0 100 25 30 150 - 65 to + 175 - 65 to + 175 50 150 150 165
(1) (2)
200 200 220
250 250 275
300 300 330 1.85
(1)
400 400 440
V V V A A
0.80 (2) 25 13 1.05
A V μA μA ns K/W K/W °C °C
Notes : (1) Ttp = 105 °C; see Fig. 1and 2; averaged over any 20 ms period; see also Fig.5 and 6 (2) Tamb = 60 °C; PCB mounting ; see Fig. 3 and 4; averaged over any 20 ms period; see also Fig.5 and 6 (3) t=10ms half sine wave; Tj = Tjmax prior to surge; V R = VRRMmax (4) Reverse Recovery Test Conditions : IF = 0.5 A, I R = 1.0 A, Irr = 0.25 A. (5) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≤ 40 μm.
Page 1 of 3
Rev. 00 : February 13, 2008
TH97/10561QM
TW00/17276EM
IATF 0060636 SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( BYD77AA - BYD77GA )
FIG.1 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF TIE-POINT TEMPERATURE
4
FIG.2 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF TIE-POINT TEMPERATURE
4
AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (A)
BYD77AA to DA
3
AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (A)
BYD77EA to GA
3
2
2
1
1
0
0
100
200
0
0
100
200
TIE-POINT TEMPERATURE, Ttp ( °C) FIG.3 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE
1.2
TIE-POINT TEMPERATURE, Ttp ( °C) FIG.4 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE
1.2
AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (A)
AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (A)
BYD77AA to DA
1.0
BYD77EA to GA
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2 0 0 100 200
0.2 0 0 100 200
AMBIENT TEMPERATURE, Tamp ( °C) FIG.5 - MAXIMUM STEADY STATE POWER DISSIPATION AS A FUNCTION OF AVERAGE FORWARD CURRENT POWER DISSIPATION, P D (W)
2
AMBIENT TEMPERATURE, Tamp ( °C) FIG.6 - MAXIMUM STEADY STATE POWER DISSIPATION AS A FUNCTION OF AVERAGE FORWARD CURRENT
2
1
POWER DISSIPATION, P D (W)
a =3
2.5
2 1.57
1.42
a =3
2.5
2 1.57
1.42
1
BYD77AA to DA
BYD77EA to GA
a = IF(RMS)/IF(AV) ; VR = VRRMmax ; δ = 0.5 0 0 1 2
a = IF(RMS)/IF(AV) ; VR = VRRMmax ; δ = 0.5 0 0 1 2
AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (A)
AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (A)
Page 2 of 3
Rev. 00 : February 13, 2008
TH97/10561QM
TW00/17276EM
IATF 0060636 SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( BYD77AA- BYD77GA )
FIG.7 - FORWARD CURRENT AS FUNCTION OF FORWARD VOLTAGE
FIG.8 - FORWARD CURRENT AS FUNCTION OF FORWARD VOLTAGE
10
10
BYD77AA to DA
FORWARD CURRENT, I F (A)
FORWARD CURRENT, I F (A)
BYD77EA to GA
8 TJ = 25 °C
8
TJ = 25 °C
6
6
4
4
2
2
0 0 1 2
0 0 1 2 3
FORWARD VOLTAGE, V F (V)
FORWARD VOLTAGE, V F (V)
FIG.9 - REVERSE CURRENT AS FUNCTION OF JUNCTION TEMPERATURE
1000
REVERSE CURRENT, IR (μA)
100 VR =VRRMmax
10
1 0
100
200
JUNCTION TEMPERATURE, TJ ( °C)
Page 3 of 3
Rev. 00 : February 13, 2008
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