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BYG20D

BYG20D

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BYG20D - ULTRAFAST AVALANCHE RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
BYG20D 数据手册
TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 BYG20D - BYG20J PRV : 200 - 600 Volts Io : 1.5 Amperes * * * * * * * Glass passivated junction Low profile package Ideal for automated placement Low reverse current Soft recovery characteristics Ultrafast reverse recovery time Pb / RoHS Free ULTRAFAST AVALANCHE RECTIFIERS SMA 1.6 ± 0.25 2.6 ± 0.15 2.3 ± 0.2 MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately) Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise noted . RATING Maximum Repetitive Peak Reverse Voltage Maximum Average Forward Current Peak Forward Surge Current 10 ms single half sine wave superimposed on rated load Maximum Instantaneous Forward Voltage (1) SYMBOL BYG20D 5.3 ± 0.35 1.6 ± 0.25 4.2 ± 0.25 FEATURES : 1.3 ± 0.2 BYG20G BYG20J UNIT VRRM IF(AV) IFSM VF IR IR(H) Trr RӨJL (2) 200 400 1.5 30 1.3 1.4 1.0 10 75 25 150 20 - 55 to + 150 600 V A A V μA ns °C/W °C/W mJ °C at I F = 1 A, Tj = 25 °C at I F = 1.5 A, Tj = 25 °C at VR = VRRM, Tj = 25 °C at VR = VRRM, Tj = 100 °C Maximum DC Reverse Current Maximum Reverse Recovery Time ( IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A) Typical Thermal Resistance, Junction to Lead Typical Thermal Resistance, Junction to Ambient Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1A, Tj = 25 °C Operating Junction and Storage Temperature Range Notes : (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Mounted on epoxy-glass hard tissue RӨJA ER TJ, TSTG Page 1 of 2 Rev. 03 : September 18, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( BYG20D - BYG20J ) FIG.1 - MAX. AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE AVERAGE FORWARD CURRENT, (A) 1.5 FIG.2 - DIODE CAPACITANCE VS. REVERSE VOLTAGE 25 1.2 DIODE CAPACITANCE, (pF) f = 1 MHz 20 0.9 15 0.6 10 0.3 VR = VRRM Half Sine Wave RӨJA 25 ≤ K/W 0 25 50 75 100 125 150 5 0 0 0.1 1.0 10 AMBIENT TEMPERATURE, ( °C) REVERSE VOLTAGE, (V) FIG.3 - FORWARD CURRENT VS. FORWARD VOLTAGE 10 FIG.4 - REVERSE CURRENT VS. JUNCTION TEMPERATURE 100 VR = VRRM T J = 150 °C FORWARD CURRENT, (A) 1.0 T J = 25 °C 0.1 REVERSE CURRENT, ( μA) 10 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 1.0 25 50 75 100 125 150 FORWARD VOLTAGE, (V) JUNCTION TEMPERATURE, (°C) Page 2 of 2 Rev. 03 : September 18, 2008
BYG20D
1. 物料型号: - BYG20D - BYG20G - BYG20J

2. 器件简介: - 该器件为超快速雪崩整流器,具有玻璃钝化结、低轮廓封装、适合自动放置、低反向电流、软恢复特性、超快速反向恢复时间、无铅/符合RoHS标准。

3. 引脚分配: - 根据文档中的机械数据部分,极性由色环表示阴极端。

4. 参数特性: - 最大重复峰值反向电压(VRRM):200V(BYG20D)、400V(BYG20G)、600V(BYG20J) - 最大平均正向电流(IF(AV)):1.5A(BYG20D) - 峰值正向浪涌电流(IFSM):30A(BYG20G) - 最大瞬时正向电压(VF):1.3V(BYG20J) - 正向电压(VF):在1.5A、25°C时为1.4V - 最大直流反向电流(IR):1.0A(BYG20J)、10μA(IR(H)) - 最大反向恢复时间(Trr):75ns(BYG20J) - 典型热阻,结到引线(ReJL):25°C/W(BYG20J) - 典型热阻,结到环境(ReJA):150°C/W(BYG20D) - 雪崩模式下的脉冲能量(ER):20mJ(BYG20J)

5. 功能详解: - 该器件主要功能为整流,具有超快速反向恢复时间,适用于需要快速切换的应用场合。

6. 应用信息: - 适用于需要快速整流的应用,如电源、电机驱动等。

7. 封装信息: - 封装类型为SMA模塑塑料封装,环氧树脂为UL94V-0级阻燃。
BYG20D 价格&库存

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