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BYG20G

BYG20G

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BYG20G - ULTRAFAST AVALANCHE RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
BYG20G 数据手册
TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 BYG20D - BYG20J PRV : 200 - 600 Volts Io : 1.5 Amperes * * * * * * * Glass passivated junction Low profile package Ideal for automated placement Low reverse current Soft recovery characteristics Ultrafast reverse recovery time Pb / RoHS Free ULTRAFAST AVALANCHE RECTIFIERS SMA 1.6 ± 0.25 2.6 ± 0.15 2.3 ± 0.2 MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately) Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise noted . RATING Maximum Repetitive Peak Reverse Voltage Maximum Average Forward Current Peak Forward Surge Current 10 ms single half sine wave superimposed on rated load Maximum Instantaneous Forward Voltage (1) SYMBOL BYG20D 5.3 ± 0.35 1.6 ± 0.25 4.2 ± 0.25 FEATURES : 1.3 ± 0.2 BYG20G BYG20J UNIT VRRM IF(AV) IFSM VF IR IR(H) Trr RӨJL (2) 200 400 1.5 30 1.3 1.4 1.0 10 75 25 150 20 - 55 to + 150 600 V A A V μA ns °C/W °C/W mJ °C at I F = 1 A, Tj = 25 °C at I F = 1.5 A, Tj = 25 °C at VR = VRRM, Tj = 25 °C at VR = VRRM, Tj = 100 °C Maximum DC Reverse Current Maximum Reverse Recovery Time ( IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A) Typical Thermal Resistance, Junction to Lead Typical Thermal Resistance, Junction to Ambient Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1A, Tj = 25 °C Operating Junction and Storage Temperature Range Notes : (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Mounted on epoxy-glass hard tissue RӨJA ER TJ, TSTG Page 1 of 2 Rev. 03 : September 18, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( BYG20D - BYG20J ) FIG.1 - MAX. AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE AVERAGE FORWARD CURRENT, (A) 1.5 FIG.2 - DIODE CAPACITANCE VS. REVERSE VOLTAGE 25 1.2 DIODE CAPACITANCE, (pF) f = 1 MHz 20 0.9 15 0.6 10 0.3 VR = VRRM Half Sine Wave RӨJA 25 ≤ K/W 0 25 50 75 100 125 150 5 0 0 0.1 1.0 10 AMBIENT TEMPERATURE, ( °C) REVERSE VOLTAGE, (V) FIG.3 - FORWARD CURRENT VS. FORWARD VOLTAGE 10 FIG.4 - REVERSE CURRENT VS. JUNCTION TEMPERATURE 100 VR = VRRM T J = 150 °C FORWARD CURRENT, (A) 1.0 T J = 25 °C 0.1 REVERSE CURRENT, ( μA) 10 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 1.0 25 50 75 100 125 150 FORWARD VOLTAGE, (V) JUNCTION TEMPERATURE, (°C) Page 2 of 2 Rev. 03 : September 18, 2008
BYG20G 价格&库存

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免费人工找货
BYG20G-E3/TR
  •  国内价格
  • 10+0.65133
  • 100+0.59386
  • 500+0.53639
  • 1000+0.47892
  • 2000+0.4406
  • 4000+0.42911

库存:1406