BYG24D

TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 BYG24D - BYG24J PRV : 200 - 600 Volts Io : 1.5 Amperes * * * * * * * Glass passivated junction Low profile package Ideal for automated placement Low reverse current Soft recovery characteristics Fast reverse recovery time Pb / RoHS Free FAST AVALANCHE RECTIFIERS SMA 1.3 ± 0.2 5.3 ± 0.35 4.2 ± 0.25 2.3 ± 0.2 FEATURES : 1.6 ± 0.25 2.6 ± 0.15 MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately) 1.6 ± 0.25 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise noted . RATING Maximum Repetitive Peak Reverse Voltage Minimum Breakdown Voltage at I R = 100 μA Maximum Average Forward Current Peak Forward Surge Current 10 ms single half sine wave superimposed on rated load Maximum Instantaneous Forward Voltage (1) SYMBOL BYG24D BYG24G BYG24J UNIT VRRM V(BR) IF(AV) IFSM VF IR IR(H) Trr RӨJC (2) 200 200 400 400 1.5 30 1.15 1.25 1.0 10 140 25 150 20 - 55 to + 150 600 600 V V A A V μA ns °C/W °C/W mJ °C at I F = 1 A, Tj = 25 °C at I F = 1.5 A, Tj = 25 °C at VR = VRRM, Tj = 25 °C at VR = VRRM, Tj = 100 °C Maximum DC Reverse Current Maximum Reverse Recovery Time( IF = 0.5A, IR = 1.0A, Irr = 0.25A) Typical Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1A, Tj = 25 °C Operating Junction and Storage Temperature Range RӨJA ER TJ, TSTG Notes : (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Mounted on epoxy-glass hard tissue 35 µm * 17 mm² cooper area per electrode. Page 1 of 2 Rev. 01 : September 18, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( BYG24D - BYG24J ) FIG.1 - AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE AVERAGE FORWARD CURRENT, (A) FIG.2 - DIODE CAPACITANCE VS. REVERSE VOLTAGE 25 1.5 1.2 DIODE CAPACITANCE, (pF) f = 1 MHz 20 0.9 15 RӨJA 25 ≤ K/W 0.6 10 0.3 VR = VRRM Half Sine Wave 0 25 50 75 100 125 150 5 0 0 0.1 1.0 10 AMBIENT TEMPERATURE, ( °C) REVERSE VOLTAGE, (V) FIG.3 - FORWARD CURRENT VS. FORWARD VOLTAGE 100 FIG.4 - REVERSE CURRENT VS. JUNCTION TEMPERATURE 100 VR = VRRM FORWARD CURRENT, (A) 10 T J = 150 °C 1.0 REVERSE CURRENT, ( μA) 10 T J = 25 °C 0.1 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 1.0 25 50 75 100 125 150 FORWARD VOLTAGE, (V) JUNCTION TEMPERATURE, (°C) Page 2 of 2 Rev. 01 : September 18, 2008