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BYT52M

BYT52M

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BYT52M - FAST RECOVERY RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
BYT52M 数据手册
BYT52A - BYT52M PRV : 50 - 1000 Volts Io : 1.4 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free FAST RECOVERY RECTIFIERS D2 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current, ( tp = 10 ms, half sinewave) Maximum Forward Voltage at IF = 1.0 A Maximum Reverse Current ( VR = VRRM) Maximum Reverse Recovery Time (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.) Maximum Junction Ambient Thermal Resistance ( L = 10mm, TL = Constant ) Junction Temperature Range Storage Temperature Range TJ TSTG - 65 to + 175 - 65 to + 175 °C °C SYMBOL VRRM VR IF(AV) IFSM VF IR IR(H) Trr RthJA BYT 52A 50 50 BYT 52B 100 100 BYT 52D 200 200 BYT 52G 400 400 BYT 52J 600 600 BYT 52K 800 800 BYT 52M 1000 1000 UNIT V V A A V µA µA ns K/W 0.85 (on PC Board) 1.4 ( L = 10 mm, TL = 25°C) 50 1.3 10 (Tj = 25°C) 150 (Tj = 150°C) 200 45 Note : (1) Reverse Recovery Test Conditions Page 1 of 2 Rev. 03 : October 5, 2005 RATING AND CHARACTERISTIC CURVES ( BAT52A - BAT52M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A SET TIME BASE FOR 25-35 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORW ARD OUTPUT CURRENT, AMPERES 2.0 100 VR = VRRM half sinewave RthJA = 45K/W L = 10 mm FIG.3 - MAXIMUM THERMAL RESISTANCE vs. LEAD LENGTH 1.6 RthJA - Therm . Resist. Junction/Am bient (K/W ) 80 1.2 60 0.8 40 L L 0.4 20 TL = constant 0 0 25 50 75 100 125 150 175 0 0 5 10 15 20 25 30 35 40 AMBIENT TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS 10 1000 L , Lead Length (mm) FIG.5 - REVERSE CURRENT vs. JUNCTION TEMPERATURE IR, REVERSE CURRENT(µA) FORW ARD CURRENT, AMPERES 1.0 TJ = 25 °C 10 0.1 10 0.01 1 0.01 25 50 75 100 125 150 175 200 Tj, JUNCTION TEMPERATURE 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : October 5, 2005
BYT52M 价格&库存

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