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BYV95D

BYV95D

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BYV95D - AVALANCHE FAST RECOVERY RECTIFIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
BYV95D 数据手册
BYV95A - BYV96E PRV : 200 - 1000 Volts Io : 1.5 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free AVALANCHE FAST RECOVERY RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.21) 0.268 (6.81) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 50 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage Min. Avalanche Breakdown Voltage @ 100 µA Maximum Average Forward Rectified Current Lead Length 10 mm. ; T tp = 65 °C Peak Forward Surge Current single half sine wave superimposed on rated load Maximum Forward Voltage at I F = 3.0 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Junction Temperature Range Storage Temperature Range Notes : T J = 2 5 °C TJ = 165 °C SYMBOL BYV95A BYV95B BYV95C BYV96D BYV96E UNIT VRRM VRMS VDC VBR(min.) IF(AV) IFSM VF IR IR(H) Trr RθJA TJ TSTG 250 50 175 - 65 to + 175 200 140 200 300 400 280 400 500 600 420 600 700 1.5 35 1.6 5.0 150 300 800 560 800 900 1000 700 1000 1100 V V V V A A V µA µA ns °C/W °C °C Maximum Reverse Recovery Time ( Note 1 ) (1) Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( BYV95A - BYV96E ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 5 0 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A SET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 1.5 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 50 1.2 PEAK FORWARD SURGE CURRENT, AMPERES 0 25 50 75 100 125 150 175 40 0.9 30 0.6 20 0.3 10 0 0 1 2 4 6 10 20 40 60 100 TIE-POINT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 50Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS FORWARD CURRENT, AMPERES 10 FIG.5 - TYPICAL REVERSE CHARACTERISTICS 10 TJ = 125 °C TJ = 100 °C 1.0 TJ = 25 °C REVERSE CURRENT, MICROAMPERES 1.0 0.1 Pulse W idth = 300 µs 2% Duty Cycle 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 F ORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 02 : March 24, 2005
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