FB125-C1000G

FB40 - FB380/C 1000G PRV : 100 - 900 Volts Io : 1.0 Amperes FEATURES : * * * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board Pb / RoHS Free FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) + AC 1.00 (25.4) MIN. 1.10 (27.9) MIN. 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated leads solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 1.29 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. AC + AC 0.22 (5.59) 0.18 (4.57) 0.22 (5.59) 0.18 (4.57) Dimension in inches and (millimeter) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Input Voltage R+C -Load Maximum DC Blocking Voltage Maximum Average Forward Current For Free Air Operation at Tc = 45°C R+L -Load C -Load Peak Forward Surge Current Single half sine wave on rated load (JEDEC Method) at T J = 125 °C Rating for fusing at T J = 125°C ( t < 100 ms.) Maximum Series Resistor C-Load VRMS = ± 10% Maximum load Capacitance + 50% -10% Maximum Forward Voltage per Diode at IF = 1.0 A Maximum Reverse Current at Rated Repetitive Peak Voltage per Diode Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 2) Operating Junction Temperature Range Storage Temperature Range Notes : SYMBOL VRRM VRMS VDC IF(AV) FB40-C 1000G 100 40 100 FB80-C FB125-C FB250-C FB380-C 1000G 1000G 1000G 1000G 200 80 200 300 125 300 1.2 1.0 30 10 4.0 1000 1.3 10 150 36 - 50 to + 125 - 50 to + 125 250 500 600 250 600 900 380 900 UNIT V V V A IFSM It Rt CL VF IR Trr RθJA TJ T STG 2 A 8.0 500 12.0 200 A 2S Ω µF V 1.0 5000 2.0 2500 µA ns °C/W °C °C 1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads. Page 1 of 3 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( FB40 - FB380/C1000G ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FB40 C1000G - FB125 C1000G BRIDGE OUTPUT FULL WAVE RECTIFIED CURRENT AVERAGE AMPERES Resistive or Inductive load. Capacitive Load FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FB250 C1000G - FB380 C1000G BRIDGE OUTPUT FULL WAVE RECTIFIED CURRENT AVERAGE AMPERES 1.2 Resistive or Inductive load. Capacitive Load 0-10µF 10-100µF >100µF 1.2 1.0 1.0 0.8 0.6 0.4 PC Board 0-10µF 10-100µF >100µF 0.8 0.6 0.4 0.375(9.5mm) PC Board 0.375(9.5mm) 0.2 0 0 Copper Pads 0.22" x 0.22" (5.5mm x 5.5mm) 0.2 Copper Pads 0.22" x 0.22" (5.5mm x 5.5mm) 0 20 40 60 80 100 120 140 20 40 60 80 100 120 140 CASE TEMPERATURE, ( °C) CASE TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 20 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES 10 10 T J = 100 °C 1 1.0 0.1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0.1 T J = 25 °C 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 3 Rev. 02 : March 25, 2005 R ATING AND CHARACTERISTIC CURVES ( FB40 - FB380/C1000G ) FIG.5 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 40 10 FIG.6 - TYPICAL JUNCTION CAPACITANCE P ER BRIDGE ELEMENT PEAK FORWARD CURRENT, AMPERES CAPACITANCE, pF 60 40 20 10 6 4 2 Vsig = 50mVp-p 0.1 0.2 0.6 1 2 46 10 20 40 100 TJ = 2 5 °C f = 1MHz 30 20 10 0 1 2 4 6 10 20 40 60 100 1 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE, VOLTS FIG.7 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 Trr + D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) O SCILLOSCOPE ( NOTE 1 ) 0 - 0.25 - 1.0 A SET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 Page 2 of 3 R ev. 02 : March 25, 2005