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FBR2502

FBR2502

  • 厂商:

    EIC

  • 封装:

  • 描述:

    FBR2502 - FAST RECOVERY - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
FBR2502 数据手册
FBR2500 - FBR2510 PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency FAST RECOVERY BRIDGE RECTIFIERS BR50 0.728(18.50) 0.688(17.40) 0.570(14.50) 0.530(13.40) 0.685(16.70) 1.130(28.70) 0.618(15.70) 1.120(28.40) * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with s ilicone thermal compound between bridge 0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) 0.210(5.30) 0.200(5.10) 0.252(6.40) 0.248(6.30) φ 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0) 0.310(7.87) 0.280(7.11) and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Metal Heatsink Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at IF = 12.5 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) IFSM It VF IR IR(H) Trr RθJC TJ TSTG 2 FBR FBR FBR FBR FBR FBR FBR UNIT 2500 2501 2502 2504 2506 2508 2510 50 35 50 100 70 100 200 140 200 400 280 400 25 300 375 1.3 10 200 150 1.45 - 50 to + 150 - 50 to + 150 250 500 600 420 600 800 560 800 1000 700 1000 V V V A A AS V µA µA ns °C/W °C °C 2 Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance per diode (Note 2) Operating Junction Temperature Range Storage Temperature Range Notes : 1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( FBR2500 - FBR2510 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A SET TIME BASE FOR 50/200 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 25 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 AVERAGE FORWARD OUTPUT CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES Tc = 55 °C 240 20 15 180 10 120 5 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 60 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE 100 NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 1.0 1.0 0.1 TJ = 25 °C Pulse W idth = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
FBR2502 价格&库存

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