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FBR5000W

FBR5000W

  • 厂商:

    EIC

  • 封装:

  • 描述:

    FBR5000W - FAST RECOVERY - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
FBR5000W 数据手册
F BR5000W - FBR5010W P RV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency FAST RECOVERY BRIDGE RECTIFIERS BR50W 0.732 (18.6) 0.692 (17.5) 1.130 (28.7) 1.120 (28.4) 0.470 (11.9) 0.430 (10.9) 0.21 (5.3) 0.20 (5.1) MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency * Weight : 15.95 grams Rating at 25 ° C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.042 (1.06) 0.038 (0.96) 1.2 (30.5) MIN. 0.310 (7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at I F = 25 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 ° C Ta = 100 ° C SYMBOL V RRM V RMS FBR FBR FBR FBR FBR FBR FBR 5000W 5001W 5002W 5004W 5006W 5008W 5010W 50 35 50 100 70 100 200 140 200 400 280 400 50 400 664 1.3 10 1.0 200 1 - 50 to + 150 - 50 to + 150 300 500 600 420 600 800 560 800 1000 700 1000 UNIT V V V A A A2S V V DC IF(AV) IFSM It VF IR IR(H) T rr R θ JC TJ T STG 2 µA mA ns Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance per diode (Note 2) Operating Junction Temperature Range Storage Temperature Range °C/W °C °C Notes : 1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink. Page 1 of 2 Rev. 01 : April 2, 2002 RATING AND CHARACTERISTIC CURVES ( FBR5000W - FBR5010W ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω OSCILLOSCOPE ( NOTE 1 ) PULSE GENERATOR ( NOTE 2 ) 0 - 0.25 Trr + - 1.0 A SET TIME BASE FOR 50/200 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 50 500 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Tc = 55 °C 400 40 30 300 20 200 10 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 100 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE 100 NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 1.0 1.0 0.1 TJ = 25 °C Pulse Width = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 01 : April 2, 2002
FBR5000W
物料型号: - FBR5000W - FBR5001W - FBR5002W - FBR5004W - FBR5006W - FBR5008W - FBR5010W

器件简介: 这些是快速恢复桥式整流器,具备高耐压、高浪涌电流能力、高可靠性、低反向电流、低正向电压降和快速开关特性,适用于高效率的应用场合。

引脚分配: - 引脚为镀铅可焊,符合MIL-STD-202方法208标准。 - 极性符号标记在外壳上。

参数特性: - 最大重复峰值反向电压(VRRM):50V至1000V不等。 - 最大RMS电压(VRMS):35V至700V不等。 - 最大直流阻断电压(Vpc):50V至1000V不等。 - 最大平均正向电流(IF(AV)):以55°C为环境温度,部分型号最大电流为50A。 - 峰值正向浪涌电流(IFSM):以JEDEC方法计算,部分型号为400A。 - 正向电压降(VF):在25A电流下,部分型号为1.3V。 - 最大直流反向电流(IR):25°C时为10μA,100°C时为1.0mA。 - 最大反向恢复时间(Trr):部分型号为200ns至500ns。 - 典型热阻(RthJC):部分型号为1°C/W。 - 工作结温范围(TJ):-50至+150°C。 - 存储温度范围(TSTG):-50至+150°C。

功能详解: 提供了详细的电气特性表和特性曲线图,包括反向恢复时间特性、输出芯片的降额曲线、最大非重复峰值正向浪涌电流整流电流、典型正向特性和典型反向特性。

应用信息: 适用于需要高效率和快速开关的应用,如电源整流等。

封装信息: - 外壳为模塑塑料,散热片与桥式封装集成。 - 环氧树脂:UL94V-0级阻燃。 - 安装位置:使用硅胶热界面材料在桥式和安装表面之间,以实现最大的热传递效率。 - 重量:15.95克。
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