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FBR5010W

FBR5010W

  • 厂商:

    EIC

  • 封装:

  • 描述:

    FBR5010W - FAST RECOVERY - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
FBR5010W 数据手册
F BR5000W - FBR5010W P RV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency FAST RECOVERY BRIDGE RECTIFIERS BR50W 0.732 (18.6) 0.692 (17.5) 1.130 (28.7) 1.120 (28.4) 0.470 (11.9) 0.430 (10.9) 0.21 (5.3) 0.20 (5.1) MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency * Weight : 15.95 grams Rating at 25 ° C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.042 (1.06) 0.038 (0.96) 1.2 (30.5) MIN. 0.310 (7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at I F = 25 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 ° C Ta = 100 ° C SYMBOL V RRM V RMS FBR FBR FBR FBR FBR FBR FBR 5000W 5001W 5002W 5004W 5006W 5008W 5010W 50 35 50 100 70 100 200 140 200 400 280 400 50 400 664 1.3 10 1.0 200 1 - 50 to + 150 - 50 to + 150 300 500 600 420 600 800 560 800 1000 700 1000 UNIT V V V A A A2S V V DC IF(AV) IFSM It VF IR IR(H) T rr R θ JC TJ T STG 2 µA mA ns Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance per diode (Note 2) Operating Junction Temperature Range Storage Temperature Range °C/W °C °C Notes : 1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink. Page 1 of 2 Rev. 01 : April 2, 2002 RATING AND CHARACTERISTIC CURVES ( FBR5000W - FBR5010W ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω OSCILLOSCOPE ( NOTE 1 ) PULSE GENERATOR ( NOTE 2 ) 0 - 0.25 Trr + - 1.0 A SET TIME BASE FOR 50/200 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 50 500 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Tc = 55 °C 400 40 30 300 20 200 10 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 100 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE 100 NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 1.0 1.0 0.1 TJ = 25 °C Pulse Width = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 01 : April 2, 2002
FBR5010W 价格&库存

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