FBR600

FBR600 - FBR610 PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board FAST RECOVERY BRIDGE RECTIFIERS BR6 0.445 (11.30) 0.405 (10.30) φ0.158 (4.00) 0.142 (3.60) + AC 0.62 (15.75) 0.58 (14.73) 0.127 (3.20) 0.047 (1.20) 0.042 (1.06) 0.038 (0.96) 0.75 (19.1) Min. 0.27 (6.90) 0.23 (5.80) * Pb / RoHS Free AC MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.6 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimension in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 50 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at IF = 3.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) IFSM It VF IR IR(H) Trr RθJC TJ TSTG 2 FBR 600 50 35 50 FBR 601 100 70 100 FBR 602 200 140 200 FBR 604 400 280 400 6.0 150 64 1.3 10 1.0 FBR 606 600 420 600 FBR 608 800 560 800 FBR 610 1000 700 1000 UNIT V V V A A AS V µA mA 2 Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance per diode (Note 2) Operating Junction Temperature Range Storage Temperature Range 150 8 250 - 50 to + 150 - 50 to + 150 500 ns °C/W °C °C Notes : 1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Thermal resistance from Junction to Case with units mounted on a 6" x 5.5" x0.11" ( 15 x 14 x 0.3 cm ) Al. plate. Page 1 of 2 Rev. 02 : March 24, 2005 R ATING AND CHARACTERISTIC CURVES ( FBR600 - FBR610 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1 .0 A S ET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 6.0 150 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Tc = 55 ° C 120 4.8 3.6 90 2.4 60 1.2 6 0Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 30 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 Pulse W idth = 300 µs 2% Duty Cycle 10 TJ = 2 5 ° C 10 NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS PER DIODE TJ = 1 00 °C FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 1.0 1.0 0.1 TJ = 2 5 ° C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 F ORWARD VOLTAGE, VOLTS P age 2 of 2 R ev. 02 : March 24, 2005