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FE1D

FE1D

  • 厂商:

    EIC

  • 封装:

  • 描述:

    FE1D - SUPER FAST RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
FE1D 数据手册
TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 FE1A ~ FE1G PRV : 50 - 400 Volts Io : 1.0 Amperes FEATURES : * * * * * * Superfast recovery time for high efficiency High surge current capability High current capability Low leakage current Low forward voltage drop Pb / RoHS Free SUPER FAST RECTIFIERS DO - 41 0.108 (2.74) 0.078 (1.99) 1.00 (25.4) MIN. 0.205 (5.20) 0.161 (4.10) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.335 gram Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. RATING Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current, R-load, Ta = 75 °C Maximum Repetitive Peak Forward Current, f > 15 Hz ( Note 1 ) Peak Forward Surge Current , Maximum Reverse Current 60 Hz half sine- wave at VR = VRRM, TJ = 25 °C at VR = VRRM, TJ = 100 °C Maximum Reverse Recovery Time ( Note 2 ) Thermal Resistance Junction to Ambient Thermal Resistance Junction to Lead Operating Junction Temperature Range Storage Temperature Range Maximum Forward Voltage at I F = 1 A SYMBOL FE1A FE1B FE1D VRRM VR IF(AV) IFRM IFSM VF IR IR(H) Trr RӨJA RӨJL TJ TSTG 0.95 2.0 50 50 45 15 50 50 100 100 200 200 1.0 10 30 FE1F FE1G 300 300 400 400 UNIT V V A A A 1.25 V μA ns K/W K/W °C °C - 50 to + 175 - 50 to + 175 Notes : (1) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case. (2) Reverse Recovery Test Conditions : IF = 0.5 A, I R = 1.0 A, Irr = 0.25 A. Page 1 of 2 Rev. 00 : March 6, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( FE1A ~ FE1G ) FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 8.3ms Single Half Sine-Wave Tj = Tjmax 1.50 AVERAGE FORWARD CURRENT, (A) 1.25 25 1.00 PEAK FORWARD SURGE CURRENT, (A) 0 25 50 75 100 125 150 175 20 0.75 15 0.50 10 0.25 5 0 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 TJ = 125 °C INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (μA) 10 FE1A - FE1F 10 TJ = 100 1 FE1G 1 TJ = 25 °C 0.1 0.1 TJ = 25 °C Pulse Width = 300 μs 1% Duty Cycle 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, (V) PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 00 : March 6, 2008
FE1D
PDF文档中包含以下信息:

1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器。

2. 器件简介:该微控制器内置高速存储器,可实现工业级的高性能和实时性。

3. 引脚分配:共有48个引脚,包括电源引脚、地引脚、I/O引脚等。

4. 参数特性:工作电压2.0V至3.6V,工作频率72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:包括GPIO、定时器、ADC、通信接口等模块的功能介绍。

6. 应用信息:适用于工业控制、医疗设备、消费电子等领域。

7. 封装信息:采用LQFP48封装。

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