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FKBL410

FKBL410

  • 厂商:

    EIC

  • 封装:

  • 描述:

    FKBL410 - FAST RECOVERY - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
FKBL410 数据手册
FKBL400 - FKBL410 PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * * * * * * * High case dielectric strength of 2000 VDC High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board FAST RECOVERY BRIDGE RECTIFIERS KBL 0.77 (19.56) 0.73 (18.54) 0.825 (20.95) 0.605 (15.36) + AC AC 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. 0.200 (5.08) 0.190 (4.82) 0.265 (6.73 ) 0.235 (5.97) * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 5.15 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.085 (2.16) 0.065 (1.65) Dimensions in inches and ( millimeter ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 50 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing ( t < 8.3 ms. ) Ta = 25 °C Ta = 100 °C Maximum Forward Voltage drop per Diode at IF = 4.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage SYMBOL VRRM VRMS VDC IF(AV) IFSM I 2t VF IR IR(H) Trr RθJC TJ TSTG FKBL FKBL FKBL FKBL FKBL FKBL FKBL UNIT 400 401 402 404 406 408 410 50 100 200 400 600 800 1000 V 35 50 70 100 140 200 280 400 4.0 150 420 600 560 800 700 1000 V V A A 166 1.4 10 1.0 150 3.3 - 50 to + 150 - 50 to + 150 250 500 A2S V µA mA ns Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance per Diode (Note 2) Operating Junction Temperature Range Storage Temperature Range °C/W °C °C Notes : 1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Thermal resistance from Junction to case with mounted on a 2.0" X 1.6"x 0.3" ( 5 cm. x 4 cm. x 0.8cm ) Al. Plate. Page 1 of 2 Rev. 02 : March 24, 2005 R ATING AND CHARACTERISTIC CURVES ( FKBL400 - FKBL410 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx.) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A S ET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 5 150 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 4 Heatsink Mounting, Tc 2.0" X 1.6" X 0.3" ( 5.0cm X 4.0cm X 0.8cm )Al.Plate 120 Tc = 50 ° C 3 90 2 60 1 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 30 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 10 Pulse W idth = 300 µs 1% Duty Cycle TJ = 2 5 °C 10 NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS PER DIODE TJ = 1 00 °C FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 1.0 1.0 0.1 TJ = 2 5 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 F ORWARD VOLTAGE, VOLTS P age 2 of 2 R ev. 02 : March 24, 2005
FKBL410 价格&库存

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