FKBP201

TH97/2478 TH09/2479 IATF 0060636 SGS TH07/1033 FKBP200 - FKBP210 PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * * * * * * * * High case dielectric strength of 2000 VDC High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board Pb / RoHS Free FAST RECOVERY BRIDGE RECTIFIERS KBP 0.59 (14.9) 0.57 (14.5) 0.448 (11.4) 0.433 (11.0) Φ3 + AC AC 0.0307 (0.78) 0.0303 (0.77) 0.696 (17.7) MIN. 0.150 (3.82) 0.148 (3.78) 0.151 (3.85 ) 0.147 (3.75) MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.4 grams 0.051 (1.30) 0.043 (1.10) Dimensions in inches and ( millimeter ) Rating at 25 °C ambient temperature unless otherwise specifie. d Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 50 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at I F = 1.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Operating Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) IFSM 2 It FKBP FKBP FKBP FKBP FKBP FKBP FKBP 200 201 202 204 206 208 210 UNIT V V V A A A2S V 50 35 50 100 70 100 200 140 200 400 280 400 2.0 35 10 1.3 10 500 600 420 600 800 560 800 1000 700 1000 VF IR IR(H) Trr RθJA TJ TSTG 150 μA μA 250 500 ns Maximum Reverse Recovery Time (Note 1) 30 - 50 to + 150 - 50 to + 150 °C/W °C °C Notes : F 1 ) Measured with I = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Thermal resistance from Junction to Ambient on P.C. Board with, 0.47" X 0.47" ( 12 mm. x 12 mm. ) Cu. pads. Page 1 of 2 Rev. 03 : June 11, 2009 TH97/2478 TH09/2479 IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( FKBP200 - FKBP210 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0 .5 A Trr + D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 A - 1.0 A SET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 cm FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 2.5 50 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Tc = 50 °C 40 2.0 1.5 30 1.0 20 0.5 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 10 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 10 Pulse Width = 300 μs 2% Duty Cycle TJ = 25 °C 10 NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS PER DIODE TJ = 100 °C FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 1.0 1.0 0.1 TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : June 11, 2009