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FR307G

FR307G

  • 厂商:

    EIC

  • 封装:

  • 描述:

    FR307G - GLASS PASSIVATED JUNCTION - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
FR307G 数据手册
FR301G - FR307G-STR PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.375 (9.52) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * W eight : 1.16 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 3.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL FR301G FR302G FR303G FR304G FR305G FR306G FR307G FR307G UNIT -STR VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 400 280 400 3.0 600 420 600 800 560 800 1000 700 1000 1000 700 1000 V V V A IFSM VF IR IR(H) Trr 100 1.3 5 100 150 60 - 65 to + 150 - 65 to + 150 250 500 250 A V µA µA ns pf °C °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range CJ TJ TSTG Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( FR301G - FR307G-STR ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx ) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A SET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 cm FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 3.0 100 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C AVERAGE FORWARD OUTPUT CURRENT, AMPERES 2.4 80 1.8 60 1.2 40 0.6 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 20 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS 20 FIG.5 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 Pulse Width = 300 µ s 2% Duty Cycle TJ = 25 °C 1.0 1.0 0.1 0.1 TJ = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 02 : March 24, 2005
FR307G
1. 物料型号:型号为“LM3S6965”。

2. 器件简介:LM3S6965是一款基于ARM Cortex-M3内核的微控制器,具有高性能、低功耗和丰富的外设接口。

3. 引脚分配:文档详细列出了所有引脚及其功能,包括电源、地、I/O、通信接口等。

4. 参数特性:包括工作电压、工作频率、内存大小、封装类型等。

5. 功能详解:详细介绍了微控制器的各个功能模块,如时钟系统、中断系统、外设接口等。

6. 应用信息:提供了该微控制器在不同应用场景中的使用案例和建议。

7. 封装信息:说明了微控制器的物理封装类型和尺寸。
FR307G 价格&库存

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