FTW10G

F 2W005G - F2W10G PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * * * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board Pb / RoHS Free FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) + AC 1.00 (25.4) MIN. 1.10 (27.9) MIN. 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated leads solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 1.29 grams AC + AC 0.22 (5.59) 0.18 (4.57) 0.22 (5.59) 0.18 (4.57) Dimension in inches and (millimeter) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375" (9.5 mm) lead length Tc = 50 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing ( t < 8.3 ms. ) Maximum Forward Voltage per Diode at IF = 1.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance per Diode (Note 2) Typical Thermal Resistance (Note 3) Operating Junction Temperature Range Storage Temperature Range Notes : SYMBOL V RRM V RMS V DC IF(AV) IFSM It VF IR IR(H) Trr CJ R θJA TJ T STG 2 F2W 005G 50 35 50 F2W 01G 100 70 100 F2W 02G 200 140 200 F2W 04G 400 280 400 2.0 30 10 1.3 10 1.0 F2W 06G 600 420 600 F2W 08G 800 560 800 F2W 10G 1000 700 1000 UNIT V V V A A AS V µA mA ns pf °C/W °C °C 2 150 250 24 36 - 50 to + 150 - 50 to + 150 500 1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts. 3 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads. Page 1 of 2 Rev. 02 : March 25, 2005 R ATING AND CHARACTERISTIC CURVES ( F2W005G - F2W10G ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω Trr + 0.5 + 50 Vdc (approx) D.U.T. PULSE GENERATOR ( NOTE 2 ) 1Ω O SCILLOSCOPE ( NOTE 1 ) 0 - 0.25 - 1.0 A SET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2 . Rise time = 10 ns max., Source Impedance = 50 ohms. 3 . All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 2.0 0.375(9.5mm) FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 1 .6 PEAK FORWARD SURGE CURRENT, AMPERES PC Board 24 1.2 C opper Pads 0.22" x 0.22" (5.5 x5.5m m ) T J = 55 ° C 18 0.8 12 0.4 60 Hz, Resistive or Inductive l oad. 0 0 25 50 75 100 125 150 175 6 S INGLE HALF SINE WAVE (JEDEC METHOD) 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS FORWARD CURRENT, AMPERES 20 10 FIG.5 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 T J = 1 00 ° C 1 1.0 TJ = 2 5 ° C 0.1 Pulse W idth = 300 µs 1 % Duty Cycle 0.1 T J = 25 °C 0.01 0 .4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 R ev. 02 : March 25, 2005