GBJ2508

GBJ2500 - GBJ2510 PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * * * * * * * * * Glass Passivated Die Construction High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC High current capability Very good heat dissipation Pb / RoHS Free SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 + 13.5 ± 0.3 ~~ 11 ± 0.2 1.0 ± 0.1 2.7 ± 0.2 10 7.5 7.5 ±0.2 ±0.2 ±0.2 0.7 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * W eight : 8.17 grams ( Approximaly ) Rating at 25 °C ambient temperature unless otherwise specified. Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 100°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 12.5 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL GBJ 2500 50 35 50 GBJ 2501 100 70 100 GBJ 2502 200 140 200 GBJ 2504 400 280 400 25 300 510 1.1 10 500 0.6 - 40 to + 150 - 40 to + 150 GBJ 2506 600 420 600 GBJ 2508 800 560 800 GBJ 2510 1000 700 1000 17.5 ± 0.5 UNIT V V V A A A 2S V µA µA °C/W °C °C VRRM VRMS VDC IF(AV) IFSM I2 t VF IR IR(H) RθJC TJ TSTG Thermal Resistance, Junction to Case Operating Junction Temperature Range Storage Temperature Range Note : 1. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink. Page 1 of 2 Rev. 03 : September 9, 2005 RATING AND CHARACTERISTIC CURVES ( GBJ2500 - GBJ2510 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 30 with heatsink FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 25 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 250 20 Resistive or Inductive load 15 200 TJ = 25 °C 150 10 100 5 50 SINGLE HALF SINE WAVE JEDEC METHOD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 10 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 Tj = 100 °C FORWARD CURRENT, AMPERES 10 REVERSE CURRENT, MICROAMPERES 1.0 Pulse Width = 300 µ s 1.0 0.1 Tj = 25 °C Tj = 25 °C 0.1 0.0 0 20 40 60 80 100 12 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : September 9, 2005