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GN2S

GN2S

  • 厂商:

    EIC

  • 封装:

  • 描述:

    GN2S - GLASS PASSIVATED JUNCTION - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
GN2S 数据手册
Certificate TH97/10561QM Certificate TW00/17276EM GN2S PRV : 700 Volts Io : 1.25 Amperes FEATURES : * * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SMB (DO-214AA) 1.1 ± 0.3 5.4 ± 0.15 4.8 ± 0.15 2.0 ± 0.1 3.6 ± 0.15 2.3 ± 0.2 0.22 ± 0.07 MECHANICAL DATA : * Case : SMB Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.1079 gram Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Minimum Average Output Forward Current Ta = 25 °C Tc = 55 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 2.0 A, Tc = 25 °C Maximum DC Reverse Current at rated DC Blocking Voltage Typical Junction Capacitance (Note1) Junction Temperature Range Storage Temperature Range Note : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC SYMBOL VRRM VRMS VDC IO VALUE 700 490 700 1.25 3.75 80 1.0 2.0 20 75 - 65 to + 150 - 65 to + 150 UNIT V V V A IFSM VF IR IR(H) CJ TJ TSTG A V μA μA pF °C °C Ta = 25 °C Ta = 100 °C Page 1 of 1 Rev. 00 : December 15, 2006

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