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GR1B

GR1B

  • 厂商:

    EIC

  • 封装:

  • 描述:

    GR1B - GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
GR1B 数据手册
GR1A - GR1M PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS SMA (DO-214AC) 1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15 1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2 0.2 ± 0.07 2.0 ± 0.2 MECHANICAL DATA : * * * * * * Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.067 gram Dimensions in millimeter Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 55 °C Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 125 °C SYMBOL GR1A GR1B GR1D GR1G GR1J GR1K GR1M UNIT VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 400 280 400 1.0 600 420 600 800 560 800 1000 700 1000 V V V A IFSM VF IR IR(H) Trr 35 1.3 5 150 150 15 - 65 to + 150 - 65 to + 150 250 500 A V µA µA ns pf °C °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range CJ TJ TSTG Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : April 17, 2002 R ATING AND CHARACTERISTIC CURVES ( GR1A - GR1M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) O SCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1 .0 A SET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.0 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 0.8 PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE W AVE 24 Ta = 50 ° C 0.6 18 0.4 12 0.2 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 6 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( ° C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS 20 NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS FORWARD CURRENT, AMPERES 10 Pulse W idth = 300 µ s 2% Duty Cycle TJ = 2 5 ° C 1.0 10 TJ = 1 00 ° C REVERSE CURRENT, MICROAMPERES 1.0 0.1 0.1 TJ = 2 5 ° C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) P age 2 of 2 Rev. 01 : April 2, 2002
GR1B
1. 物料型号: - GR1A - GR1M

2. 器件简介: - 玻璃钝化结快速恢复整流器,SMA(DO-214AC)封装。

3. 引脚分配: - 色环表示阴极端。

4. 参数特性: - 玻璃钝化芯片、高电流能力、高可靠性、低反向电流、低正向电压降、快速开关提高效率。

5. 功能详解: - 提供了反向恢复时间特性和测试电路图、输出整流电流降额曲线、最大非重复峰值正向浪涌电流、典型正向特性和典型反向特性等图表。

6. 应用信息: - 适用于需要高效率和快速开关的应用。

7. 封装信息: - 封装形式:SMA模塑塑料、环氧树脂:UL94V-0级阻燃、引脚:表面贴装形成、重量:0.067克。

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