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HER108T/R

HER108T/R

  • 厂商:

    EIC

  • 封装:

    DO-204AL

  • 描述:

    DIODE GEN PURP 1000V 1A DO41

  • 数据手册
  • 价格&库存
HER108T/R 数据手册
www.eicsemi.com HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 1.00 (25.4) MIN. 0.108 (2.74) 0.078 (1.99) 0.205 (5.20) 0.161 (4.10) * Pb / RoHS Free MECHANICAL DATA : 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Recurrent Peak Reverse Voltage VRRM HER 101 50 Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V RATING SYMBOL Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C HER 102 100 HER 103 200 HER 104 300 HER 105 400 HER 106 600 HER 107 800 HER 108 1000 UNIT V IF(AV) 1.0 A IFSM 30 A Maximum Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C VF 1.1 1.7 V IR 5 µA IR(H) 50 µA Maximum Reverse Recovery Time ( Note 1 ) Trr Typical Junction Capacitance ( Note 2 ) CJ 50 50 75 ns pf Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 02 : March 24, 2005 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( HER101 - HER108 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω Trr 10 Ω + 0.5 A D.U.T. + 0 PULSE GENERATOR ( NOTE 2 ) 50 Vdc (approx.) 1Ω - 0.25 A OSCILLOSCOPE ( NOTE 1 ) - 1.0 A SET TIME BASE FOR 25-35 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 1 cm 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.0 0.8 0.6 0.4 0.2 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C 24 18 12 6 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 0 175 1 AMBIENT TEMPERATURE, ( °C) 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 10 100 Pulse W idth = 300 µs 2% Duty Cycle TJ = 100 °C REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES 2 10 HER101-HER105 1.0 1.0 0.1 TJ = 25 °C HER106-HER108 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
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