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HER201

HER201

  • 厂商:

    EIC

  • 封装:

  • 描述:

    HER201 - HIGH EFFICIENT RECTIFIER DIODES - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
HER201 数据手册
HER201 - HER208 PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency HIGH EFFICIENT RECTIFIER DIODES D2 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Maximum Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 2.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) HER 201 50 35 50 HER 202 100 70 100 HER 203 200 140 200 HER 204 300 210 300 HER 205 400 280 400 HER 206 600 420 600 HER 207 800 560 800 HER 208 1000 700 1000 UNIT V V V A 2.0 IFSM VF IR IR(H) Trr 75 1.1 10 50 50 50 - 65 to + 150 - 65 to + 150 75 1.7 A V µA µA ns pf °C °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range CJ TJ TSTG Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : April 2, 2002 RATING AND CHARACTERISTIC CURVES ( HER201 - HER208 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A S ET TIME BASE FOR 25-35 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 2.5 100 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE 80 Ta = 50 °C AVERAGE FORWARD OUTPUT CURRENT, AMPERES 2.0 1.5 60 1.0 40 0.5 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 20 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS 10 Pulse W idth = 300 µs 2% Duty Cycle 10 TJ = 25 °C NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 TJ = 100 °C FORWARD CURRENT, AMPERES 1.0 HER201-HER205 1.0 HER206-HER208 0.1 TJ = 25 ° C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 01 : April 2, 2002
HER201
1. 物料型号:型号为STM32F103ZET6,是一款基于ARM Cortex-M3的32位微控制器。

2. 器件简介:该器件是高性能微控制器,适用于工业控制、消费电子等领域。

3. 引脚分配:共有144个引脚,包括电源引脚、地引脚、I/O引脚等。

4. 参数特性:工作电压2.0V至3.6V,工作频率72MHz,内置512KB Flash和64KB RAM。

5. 功能详解:具备多种通信接口,如USB、CAN、I2C等,支持浮点运算和DSP指令。

6. 应用信息:适用于需要高性能处理能力的场合,如电机控制、图像处理等。

7. 封装信息:采用LQFP144封装,尺寸为20mm x 20mm。
HER201 价格&库存

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