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HER503BULK

HER503BULK

  • 厂商:

    EIC

  • 封装:

    DO-27(DO-201AA)

  • 描述:

    DIODE GEN PURP 200V 5A DO201AD

  • 数据手册
  • 价格&库存
HER503BULK 数据手册
www.eicsemi.com HER501 - HER508 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 5.0 Amperes DO - 201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free 1.00 (25.4) MIN. 0.208 (5.30) 0.188 (4.80) 0.374 (9.50) 0.283 (7.20) MECHANICAL DATA : 1.00 (25.4) MIN. 0.052 (1.33) 0.048 (1.23) * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.16 grams Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Recurrent Peak Reverse Voltage VRRM HER 501 50 Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V RATING SYMBOL Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C HER 502 100 HER 503 200 HER 504 300 HER 505 400 HER 506 600 HER 507 800 HER 508 1000 UNIT V IF(AV) 5.0 A IFSM 200 A Maximum Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 5.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C VF 1.1 1.7 V IR 10 μA IR(H) 50 μA Maximum Reverse Recovery Time ( Note 1 ) Trr Typical Junction Capacitance ( Note 2 ) CJ Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C 50 75 50 ns pf Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 03: October 8, 2012 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( HER501 - HER508 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω Trr 10 Ω + 0.5 A 0 D.U.T. + PULSE GENERATOR ( NOTE 2 ) 50 Vdc (approx) 1Ω - 0.25 A - 1.0 A OSCILLOSCOPE ( NOTE 1 ) SET TIME BASE FOR 25-35 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 1 cm 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 8.3 ms SINGLE HALF SINE WAVE PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 5 4 3 2 1 Ta = 50 °C 160 120 80 40 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 0 175 1 2 4 AMBIENT TEMPERATURE, ( °C) 100 FORWARD CURRENT, AMPERES 10 20 40 60 100 FIG.5 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES FIG.4 - TYPICAL FORWARD CHARACTERISTICS Pulse Width = 300 μs 2% Duty Cycle TJ = 25 °C 10 HER501-HER505 HER506-HER508 1.0 6 NUMBER OF CYCLES AT 60Hz 0.1 10 TJ = 100 °C 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03: October 8, 2012
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