www.eicsemi.com
HER501 - HER508
HIGH EFFICIENT
RECTIFIER DIODES
PRV : 50 - 1000 Volts
Io : 5.0 Amperes
DO - 201AD
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
1.00 (25.4)
MIN.
0.208 (5.30)
0.188 (4.80)
0.374 (9.50)
0.283 (7.20)
MECHANICAL DATA :
1.00 (25.4)
MIN.
0.052 (1.33)
0.048 (1.23)
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
VRRM
HER
501
50
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
V
RATING
SYMBOL
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
HER
502
100
HER
503
200
HER
504
300
HER
505
400
HER
506
600
HER
507
800
HER
508
1000
UNIT
V
IF(AV)
5.0
A
IFSM
200
A
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 5.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
VF
1.1
1.7
V
IR
10
μA
IR(H)
50
μA
Maximum Reverse Recovery Time ( Note 1 )
Trr
Typical Junction Capacitance ( Note 2 )
CJ
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
50
75
50
ns
pf
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 03: October 8, 2012
www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( HER501 - HER508 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5 A
0
D.U.T.
+
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25 A
- 1.0 A
OSCILLOSCOPE
( NOTE 1 )
SET TIME BASE FOR 25-35 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1 cm
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
200
8.3 ms SINGLE HALF SINE WAVE
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
5
4
3
2
1
Ta = 50 °C
160
120
80
40
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
0
175
1
2
4
AMBIENT TEMPERATURE, ( °C)
100
FORWARD CURRENT, AMPERES
10
20
40
60 100
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
Pulse Width = 300 μs
2% Duty Cycle
TJ = 25 °C
10
HER501-HER505
HER506-HER508
1.0
6
NUMBER OF CYCLES AT 60Hz
0.1
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 03: October 8, 2012
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