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KBPC2506

KBPC2506

  • 厂商:

    EIC

  • 封装:

  • 描述:

    KBPC2506 - SILICON BRIDGE RECTIFIERS - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
KBPC2506 数据手册
KBPC2500 - KBPC2510 PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON BRIDGE RECTIFIERS KBPC 0.728(18.50) 0.688(17.40) 0.570(14.50) 0.530(13.40) 0.685(16.70) 1.130(28.70) 0.618(15.70) 1.120(28.40) * Pb / RoHS Free MECHANICAL DATA : * * * * * Case : Metal Case Epoxy : UL94V-O rate flame retardant Terminals : plated .25" (6.35 mm). Faston Polarity : Polarity symbols marked on case Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams 0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) 0.210(5.30) 0.200(5.10) 0.252(6.40) 0.248(6.30) φ 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0) 0.310(7.87) 0.280(7.11) Metal Heatsink Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 12.5 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Note : Ta = 25 °C Ta = 100 °C SYMBOL KBPC 2500 50 35 50 KBPC 2501 100 70 100 KBPC 2502 200 140 200 KBPC 2504 400 280 400 25 300 375 1.1 10 200 1.45 KBPC 2506 600 420 600 KBPC 2508 800 560 800 KBPC 2510 1000 700 1000 UNIT V V V A A A2S V VRRM VRMS VDC IF(AV) IFSM I2t VF IR IR(H) RθJC TJ TSTG µA µA °C/W °C °C - 40 to + 150 - 40 to + 150 1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES (KBPC2500 - KBPC2510 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT PEAK FORW ARD SURGE CURRENT, AMPERES 30 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 AVERAGE FORW ARD OUTPUT CURRENT, AMPERES 25 250 20 200 TJ = 50 °C 15 150 10 HEAT-SINK MOUNTING, Tc 5" x 6" x 4.9" THK. (12.8cm x 15.2cm x 12.4cm) Al.-Finned plate 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 5 50 0 0 0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE 10 TJ = 100 °C FORW ARD CURRENT, AMPERES 10 1.0 Pulse Width = 300 µs 1 % Duty Cycle 1.0 0.1 TJ = 25 °C TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
KBPC2506
1. 物料型号: - KBPC2500至KBPC2510是一系列硅桥式整流器。

2. 器件简介: - 这些器件具备高电流能力、高浪涌电流能力、高可靠性、低反向电流和低正向电压降,且无铅/无RoHS。

3. 引脚分配: - 引脚为镀层.25英寸(6.35毫米)的Faston,极性符号标记在外壳上。

4. 参数特性: - 工作电压范围:50至1000伏特(VRRM)。 - 最大直流阻断电压(VDC):50至1000伏特。 - 最大平均正向电流(IF(AV)):25安培(在55°C时)。 - 峰值正向浪涌电流(IFSM):300安培(单半正弦波叠加在额定负载上,JEDEC方法)。 - 最大正向电压每二极管(VF):1伏特。 - 最大直流反向电流(IR):在25°C时为10毫安,在100°C时为200微安。

5. 功能详解: - 这些整流器适用于单相、半波、60Hz的电阻性或感性负载。对于电容性负载,电流需降低20%。 - 热阻(ROJC):1.45°C/W(从结到外壳,装置安装在5" x 6" x 4.9"(12.8cm x 15.2cm x 12.4cm)的铝翅片上)。

6. 应用信息: - 适用于需要高电流和高可靠性的整流应用,如电源、电机驱动等。

7. 封装信息: - 封装为金属外壳,环氧树脂为UL94V-0级阻燃,重量为17.1克。
KBPC2506 价格&库存

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