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KBU8B

KBU8B

  • 厂商:

    EIC

  • 封装:

  • 描述:

    KBU8B - Silicon Bridge Rectifier - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
KBU8B 数据手册
KBU8A ~ KBU8M PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * Ideal for printed circuit boards * Reliable low cost construction utilizing molded plastic technique * Plastic material has Underwriters Laboratory Flammability Classification 94V-0 * Pb / RoHS Free Silicon Bridge Rectifier KBU 0.935 (23.7) 0.895 (22.7) + + 0.760 (19.3) MAX. 0.085 (2.2) 0.065 (1.7) AC + AC 0.16 (4.1) 0.14 (3.6) 1.0 (25.4) MIN. 1.80 (29.9) MIN. MECHANICAL DATA : * * * * Case : Molded plastic Polarity : Polarity symbols marked on case Mounting position : Any Weight : 8.0 grams 0.085 (2.16) 0.065 (1.65) 0.220 (5.60) 0.180 (4.60) 0.052 (1.30) 0.048 (1.20) 0.280 (7.1 ) 0.260 (6.6) Dimensions in inches and ( millimeter ) Rating at 25 °C ambient temperature unless otherwise specified. This rating are limiting values above which the serviceability of any semiconductor device may be impaired. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Output Current Tc=65°C Peak Forward Surge Current, 8.3ms Single half sine-wave Superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage per leg at IF = 8 A Maximum DC Reverse Current at Rated DC Blocking Voltage per leg Thermal Resistance, Junction to Ambient, per leg (Note1) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) RθJA TJ TSTG KBU KBU KBU KBU KBU KBU KBU 8A 8B 8D 8G 8J 8K 8M 50 100 200 400 600 800 1000 35 50 70 100 140 200 280 400 8.0 250 1.0 10 (Ta = 25°C) 1000 (Ta = 100°C) 18 - 55 to + 150 - 55 to + 150 420 600 560 800 700 1000 UNIT V V V A A V µA °C/W °C °C Note : (1) Device mounted on PCB with 0.375" (9.5 mm) lead length and 0.5 x 0.5" (13 x 13 mm) copper pads. Page 1 of 2 Rev. 02 : September 3, 2005 RATING AND CHARACTERISTIC CURVES ( KBU8A - KBU8M ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 8.0 400 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 6.0 PEAK FORWARD SURGE CURRENT, AMPERES 4.0 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 2.0 Single phase Half Wave 60Hz Resistive or Inductive Load .375" 9.0 mm Lead Lengths 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES Ta = 100 °C INSTANTANEOUS FORWARD CURRENT, AMPERES 10 10 1.0 1.0 TJ = 25 °C Pulse Width = 300 µ s 2 % Duty Cycle 0.1 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Ta = 25 °C 0.1 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 02 : September 3, 2005
KBU8B 价格&库存

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