LL101B

LL101A - LL101C FEATURES : • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • This diode is also available in the DO-35 case with type designation SD101A, B, C • Pb / RoHS Free SCHOTTKY BARRIER DIODES MiniMELF (SOD-80C) Cathode Mark φ 0.063 (1.64) 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) Mounting Pad Layout 0.098 (2.50) Max. 0.049 (1.25)Min. MECHANICAL DATA : Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g 0.197 (5.00) REF 0.079 (2.00)Min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Repetitive Peak Reverse Voltage Maximum Single Cycle Surge 10µs Square Wave Power Dissipation (Infinite Heatsink) Thermal Resistance Junction to Ambient Air Junction Temperature Storage temperature range Note: (1) Valid provided that electrodes are kept at ambient temperature. 25 °C ambient temperature unless otherwise specified.) Symbol LL101A LL101B LL101C VRRM IFSM PD RθJA TJ TS Value 60 50 40 2 400(1) 300 125 (1) (1) Unit V A mW °C/W °C °C -55 to + 150 (1) Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Breakdown Voltage LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C Symbol V(BR)R Test Condition IR = 10 µA V R = 50 V V R = 40 V V R = 30 V IF = 1mA Reverse Current IR Forward Voltage Drop VF IF = 15mA Trr IF = IR = 5mA , recover to 0.1IR Min 60 50 40 - Typ - Max 10 10 10 0.41 0.40 0.39 1.00 0.95 0.90 1.0 Unit V µA V Reverse Recovery Time Page 1 of 2 ns Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( LL101A - LL101C ) Typical variation of forward current and forward voltage for primary conduction through the schottky barrier 10 LL101C Typical forward conduction curve of combination Schottky barrier and PN junction guard ring 100 LL101A LL101B 5 Forward Current , IF (mA) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.5 LL101A LL101B Forward Current , IF (mA) 80 LL101C 60 40 20 0 1 0 0.5 Forward Voltage , VF (V) 1 Forward Voltage , VF (V) Typical capacitance curve as a function of reverse Voltage Typical variation of reverse current at various temperatures 2 Tj = 25°C 100 50 20 Ta = 125°C Reverse Current , IR (µA) 10 5 2 1 0.5 0.2 0.1 0.05 0.02 Ta = 25°C Diode Capacitance , Cd (pF) LL101B LL101C 1 LL101A 0.41 0 0 10 20 30 40 50 Reverse Voltage , VR (V) 0.01 0 10 20 30 40 50 Reverse Voltage , VR (V) Page 2 of 2 Rev. 02 : March 24, 2005