LMN1B

LMN1B

  • 厂商:

    EIC

  • 封装:

  • 描述:

    LMN1B - GLASS PASSIVATED JUNCTION - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
LMN1B 数据手册
TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 LMN1A - LMN1M PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * Glass passivated junction chip High current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) 0.122(3.10) MECHANICAL DATA : * Case : M1A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram (approximately) 0.024(0.60) 0.022(0.55) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 °C Maximum Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 1.0 Amp. Maximum DC Reverse Current Ta = 25 °C at rated DC Blocking Voltage Ta = 100 °C Typical Reverse Recovery Time (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.) Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : SYMBOL LMN1A LMN1B LMN1D LMN1G LMN1J VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) Trr CJ RӨJA TJ TSTG 50 35 50 100 70 100 200 140 200 400 280 400 1.0 30 1.1 5.0 50 2.0 15 26 - 65 to + 175 - 65 to + 175 600 420 600 LMN1K LMN1M UNIT V V V A A V µA µA µs pF °C/W °C °C 800 560 800 1000 700 1000 (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 00 : January 21, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( LMN1A - LMN1M ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.0 50 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT Ta = 25 °C AVERAGE FORWARD CURRENT, (A) 0.8 PEAK FORWARD SURGE CURRENT, (A) 0 25 50 75 100 125 150 175 40 0.6 30 0.4 20 0.2 10 0 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 10 Ta = 100 °C FORWARD CURRENT, (A) REVERSE CURRENT, (µA) 1.0 1.0 Pulse Width = 300 μs 2% Duty Cycle 0.1 TJ = 25 °C 0.1 Ta = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, (V) PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 00 : January 21, 2008
LMN1B
1. 物料型号: - LMN1A至LMN1M,这些型号代表了一系列玻璃钝化结硅整流二极管。

2. 器件简介: - 这些器件是玻璃钝化结芯片,具有高电流能力、高可靠性、低反向电流和低正向电压降的特点,并且符合Pb/RoHS标准。

3. 引脚分配: - 器件采用M1A封装,塑料模塑,环氧树脂封装,符合UL94V-0级别的阻燃等级。引脚为轴向可焊,符合MIL-STD-202标准。

4. 参数特性: - 最大重复峰值反向电压(VRRM)从50V至1000V不等。 - 最大RMS电压(VRMS)从35V至700V不等。 - 最大直流阻断电压(Voc)与VRRM相同。 - 最大平均正向电流(IF(AV))为1.0A。 - 最大正向电压(VF)在1.0A电流下为1.1V。 - 最大直流反向电流(IR)在25°C时为5.0A。 - 典型反向恢复时间(Trr)为2.0秒。 - 典型结电容(CJ)为15pF。 - 典型热阻(ReJA)为26°C/W。

5. 功能详解: - 这些二极管主要用于整流应用,具有高电流能力和低功耗特性。

6. 应用信息: - 适用于需要高可靠性和低功耗的整流应用,如电源、电机控制等。

7. 封装信息: - 封装类型为M1A,重量约为0.20克,具体尺寸以英寸和毫米给出。
LMN1B 价格&库存

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