MR854

MR854

  • 厂商:

    EIC

  • 封装:

  • 描述:

    MR854 - FAST RECOVERY RECTIFIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
MR854 数据手册
MR850 - MR858 PRV : 50 - 600 Volts Io : 3.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency FAST RECOVERY RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.375 (9.52) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.16 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 90 °C Peak Forward Surge Current, 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 3.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL MR850 MR851 MR852 MR854 MR856 MR858 VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 3.0 400 280 400 600 420 600 800 560 800 UNIT V V V A IFSM VF IR IR(H) Trr 100 1.25 10 150 150 28 - 65 to + 150 - 65 to + 150 A V µA µA ns pf °C °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range CJ TJ TSTG Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : April 2, 2002 RATING AND CHARACTERISTIC CURVES ( MR850 - MR858 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A SET TIME BASE FOR 50 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 3.0 100 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C AVERAGE FORWARD OUTPUT CURRENT, AMPERES 2.4 80 1.8 60 1.2 40 0.6 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 20 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 FORWARD CURRENT, AMPERES Pulse Width = 300 µs 2% Duty Cycle TJ = 25 °C 10 TJ = 100 °C 1.0 1.0 0.1 TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 01 : April 2, 2002
MR854 价格&库存

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