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NS8AT

NS8AT

  • 厂商:

    EIC

  • 封装:

  • 描述:

    NS8AT - Glass Passivated General Purpose - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
NS8AT 数据手册
NS8AT - NS8MT PRV : 50 - 1000 Volts Io : 8.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Glass passivated chip junction * Pb / RoHS Free Glass Passivated General Purpose TO-220AB 0.154(3.91)DIA. 0.148(3.74) 0.113(2.87) 0.103(2.62) 0.415(10.54)MAX. 0.055(1.39) 0.045(1.14) 0.145(3.68) 0.135(3.43) 0.350(8.89) 0.330(8.39) 12 3 PIN 1 PIN 2 CASE PIN 3 0.205(520) 0.195(4.95) 0.037(0.94) 0.027(0.68) 0.105(2.67) 0.095(2.41) 0.022(0.56) 0.014(0.36) 0.160(4.06) 0.140(3.56) 0.560(14.22) 0.530(13.46) 0.185(4.70) 0.175(4.44) 0.635(16.13) 0.625(15.87) 0.603(15.32) 0.573(14.55) MECHANICAL DATA : * Case : Epoxy, Molded * Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds * Weight : 1.9 grams (Approximately) Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum Working Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Current, Tc = 150°C Maximum Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage at I F = 8 A Maximum Reverse Current at Rated DC Blocking Voltage Tc = 25 °C Tc = 150 °C SYMBOL V RRM V RWM V DC I F(AV) NS8 AT 50 35 50 NS8 BT 100 70 100 NS8 DT 200 140 200 NS8 GT 400 280 400 8.0 NS8 JT 600 420 600 NS8 KT 800 560 800 NS8 MT 1000 700 1000 UNIT V V V A IFSM 125 A VF IR IR(H) R θJC TJ T STG 1.1 10 100 3.0 - 55 to + 150 - 55 to + 150 V µA µA °C/W °C °C Maximum Thermal Resistance, Junction to Case Junction Temperature Range Storage Temperature Range Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( NS8AT ~ NS8MT ) FIG.1 - FORWARD CURRENT DERATING CURRENT AVERAGE FORW ARD RECTIFIED CURRENT, AMPERES 12 150 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT TJ =TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC) Method PEAK FORW ARD SURGE CURRENT, AMPERES 100 125 150 175 125 10 8 100 6 60 Hz Resistive or Inductive Load 75 4 50 2 25 0 0 0 25 50 75 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 100 NUMBER OF CYCLES AT 60Hz FIG. 4 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORW ARD CURRENT, AMPERES INSTANTANEOUS REVERSE CURRENT, MICROAMPERES TJ = 100 °C 10 10 Pulse Width = 300 µs 1% Duty Cycle 1 1 TJ = 25 °C 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) JUNCTION CAPACITANCE, pF 12 0 10 0 80 60 40 20 0 0.1 1 10 100 1000 TJ = 25°C f = 1.0 MHz Vsig = 50 mVp-p REVERSE VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 25, 2005
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