NS8AT - NS8MT
PRV : 50 - 1000 Volts Io : 8.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Glass passivated chip junction * Pb / RoHS Free
Glass Passivated General Purpose
TO-220AB
0.154(3.91)DIA. 0.148(3.74) 0.113(2.87) 0.103(2.62) 0.415(10.54)MAX. 0.055(1.39) 0.045(1.14) 0.145(3.68) 0.135(3.43) 0.350(8.89) 0.330(8.39) 12 3 PIN 1 PIN 2 CASE PIN 3 0.205(520) 0.195(4.95) 0.037(0.94) 0.027(0.68) 0.105(2.67) 0.095(2.41) 0.022(0.56) 0.014(0.36) 0.160(4.06) 0.140(3.56) 0.560(14.22) 0.530(13.46) 0.185(4.70) 0.175(4.44)
0.635(16.13) 0.625(15.87)
0.603(15.32) 0.573(14.55)
MECHANICAL DATA :
* Case : Epoxy, Molded * Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds * Weight : 1.9 grams (Approximately)
Dimensions in inches and ( millimeters )
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage Maximum Working Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Current, Tc = 150°C Maximum Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage at I F = 8 A Maximum Reverse Current at Rated DC Blocking Voltage Tc = 25 °C Tc = 150 °C
SYMBOL
V RRM V RWM V DC I F(AV)
NS8 AT
50 35 50
NS8 BT
100 70 100
NS8 DT
200 140 200
NS8 GT
400 280 400 8.0
NS8 JT
600 420 600
NS8 KT
800 560 800
NS8 MT
1000 700 1000
UNIT
V V V A
IFSM
125
A
VF IR IR(H) R θJC TJ T STG
1.1 10 100 3.0 - 55 to + 150 - 55 to + 150
V µA µA °C/W °C °C
Maximum Thermal Resistance, Junction to Case Junction Temperature Range Storage Temperature Range
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( NS8AT ~ NS8MT )
FIG.1 - FORWARD CURRENT DERATING CURRENT AVERAGE FORW ARD RECTIFIED CURRENT, AMPERES
12 150
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
TJ =TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC) Method
PEAK FORW ARD SURGE CURRENT, AMPERES
100 125 150 175
125
10 8
100
6 60 Hz Resistive or Inductive Load
75
4
50
2
25
0
0 0 25 50 75 1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( °C) FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
100 100
NUMBER OF CYCLES AT 60Hz
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS FORW ARD CURRENT, AMPERES
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
TJ = 100 °C
10
10
Pulse Width = 300 µs 1% Duty Cycle 1
1
TJ = 25 °C 0.1
0.1 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
20
40
60
80
100
120
140
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
JUNCTION CAPACITANCE, pF
12 0 10 0 80 60 40 20 0 0.1 1 10 100 1000 TJ = 25°C f = 1.0 MHz Vsig = 50 mVp-p
REVERSE VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 25, 2005
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