P600G

P600G

  • 厂商:

    EIC

  • 封装:

  • 描述:

    P600G - SILICON RECTIFIER DIODES - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
P600G 数据手册
TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 P600A - P600M PRV : 50 - 1000 Volts FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON RECTIFIER DIODES D6 0.360 (9.1) 0.340 (8.6) 1.00 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) MECHANICAL DATA : * Case : Void-free molded plastic body * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 2.1 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifie. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 60 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage at I F = 6 A Maximum DC Reverse Current at rated DC Blocking Voltage Typical Thermal Resistance (1) Typical reverse recovery time (2) Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL P600A VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) CJ RθJA Trr TJ TSTG 50 35 50 P600B P600D P600G P600J P600K P600M UNIT V V V A A V μA mA pF °C/W μs °C °C 100 70 100 200 140 200 400 280 400 6.0 400 1.0 5.0 1.0 150 20 2.5 600 420 600 800 560 800 1000 700 1000 Typical junction capacitance at 4.0V, 1MHz - 50 to + 150 - 50 to + 150 Notes : (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted with 1.1” x 1.1” (30 x 30mm) copper pads (2) Reverse Recovery Test Conditions IF=0.5A, IR=1.0A, Irr=0.25A : Page 1 of 2 Rev. 05 : September 16, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( P600A - P600M ) FIG.1 - MAXIMUM FORWARD CURRENT DERATING CURRENT 6 .0 600 60 Hz Resistive or Inductive Load FIG.2 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES 5 .0 500 4 .0 400 3 .0 1.1 x 1.1" (30 x 30 mm) Copper Pads Standard P.C.B. Mounting 1.0 0.375"(9.5mm) Lead Length 300 TJ =150 °C 200 2.0 100 8.3ms SINGLE HALF SINE-WAVE (JEDEC) Method 1 2 4 6 10 20 40 60 100 0 0 25 50 75 100 125 150 175 0 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 FIG. 4 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT, AMPERES INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 10 10 Ta = 100 °C Pulse Width = 300 μs 1% Duty Cycle 1.0 Rev. 04 : March 30, 2005 TJ = 25 °C 1.0 0.1 0.1 Ta = 25 °C 0.01 0 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 05 : September 16, 2008
P600G
### 物料型号 - 型号包括:P600A, P600B, P600D, P600G, P600J, P600K, P600M。

### 器件简介 - 这些器件是硅整流二极管,具有高电流能力、高浪涌电流能力、高可靠性、低反向电流和低正向电压降等特点,并且不含铅/符合RoHS标准。

### 引脚分配 - 引脚为轴向引脚,可焊接,符合MIL-STD-202标准。

### 参数特性 - 最大重复峰值反向电压(VRRM):50至1000伏不等。 - 最大RMS电压(VRMS):35至700伏不等。 - 最大直流阻断电压(VDc):50至1000伏不等。 - 最大平均正向电流(IF(AV)):在P600G型号中为6.0A。 - 峰值正向浪涌电流(IFSM):在P600G型号中为400A。 - 最大正向瞬时电压(VF):在P600G型号中为1.0V。 - 最大直流反向电流(IR):在P600G型号中为5.0A。 - 在额定直流阻断电压下100°C时的最大直流反向电流(IR(H)):在P600G型号中为1.0mA。 - 典型结电容(CJ):在P600G型号中为150pF。 - 典型热阻(RBJA):P600B型号为20°C/W。 - 典型反向恢复时间(T):P600B型号为2.5秒。 - 结温范围(TJ):-50至+150°C。 - 储存温度范围(TSTG):-50至+150°C。

### 功能详解 - 这些二极管主要用于整流应用,即将交流电转换为直流电。

### 应用信息 - 适用于需要高电流和高可靠性的整流应用场合。

### 封装信息 - 封装为无空洞模塑料体,环氧树脂符合UL94V-0级阻燃等级。
P600G 价格&库存

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