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P600K

P600K

  • 厂商:

    EIC

  • 封装:

  • 描述:

    P600K - SILICON RECTIFIER DIODES - EIC discrete Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
P600K 数据手册
TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 P600A - P600M PRV : 50 - 1000 Volts FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON RECTIFIER DIODES D6 0.360 (9.1) 0.340 (8.6) 1.00 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) MECHANICAL DATA : * Case : Void-free molded plastic body * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 2.1 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifie. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 60 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage at I F = 6 A Maximum DC Reverse Current at rated DC Blocking Voltage Typical Thermal Resistance (1) Typical reverse recovery time (2) Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL P600A VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) CJ RθJA Trr TJ TSTG 50 35 50 P600B P600D P600G P600J P600K P600M UNIT V V V A A V μA mA pF °C/W μs °C °C 100 70 100 200 140 200 400 280 400 6.0 400 1.0 5.0 1.0 150 20 2.5 600 420 600 800 560 800 1000 700 1000 Typical junction capacitance at 4.0V, 1MHz - 50 to + 150 - 50 to + 150 Notes : (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted with 1.1” x 1.1” (30 x 30mm) copper pads (2) Reverse Recovery Test Conditions IF=0.5A, IR=1.0A, Irr=0.25A : Page 1 of 2 Rev. 05 : September 16, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( P600A - P600M ) FIG.1 - MAXIMUM FORWARD CURRENT DERATING CURRENT 6 .0 600 60 Hz Resistive or Inductive Load FIG.2 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES 5 .0 500 4 .0 400 3 .0 1.1 x 1.1" (30 x 30 mm) Copper Pads Standard P.C.B. Mounting 1.0 0.375"(9.5mm) Lead Length 300 TJ =150 °C 200 2.0 100 8.3ms SINGLE HALF SINE-WAVE (JEDEC) Method 1 2 4 6 10 20 40 60 100 0 0 25 50 75 100 125 150 175 0 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 FIG. 4 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT, AMPERES INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 10 10 Ta = 100 °C Pulse Width = 300 μs 1% Duty Cycle 1.0 Rev. 04 : March 30, 2005 TJ = 25 °C 1.0 0.1 0.1 Ta = 25 °C 0.01 0 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 05 : September 16, 2008
P600K
1. 物料型号 - 型号系列:P600A-P600M

2. 器件简介 - 硅整流二极管,具有高电流能力、高浪涌电流能力、高可靠性、低反向电流和低正向电压降的特点,并且符合Pb/RoHS标准。

3. 引脚分配 - 引脚通过MIL-STD-202方法208保证,轴向可焊。

4. 参数特性 - 最大重复峰值反向电压(VRRM):50-1000伏特 - 最大RMS电压(VRMS):35-700伏特 - 最大直流阻断电压:50-1000伏特 - 最大平均正向电流(IFAV):0.375A(9.5mm引脚长度,Ta=60°C) - 峰值正向浪涌电流:8.3ms单半正弦波叠加在IFSM上,400A额定负载(JEDEC方法) - 最大瞬时正向电压在1F=6A时:1.0V - 最大直流反向电流在Ta=25°C时:5.0mA - 在额定直流阻断电压Ta=100°C时:1.0mA - 典型结电容在4.0V,1MHz时:150pF - 典型热阻(RBJA):20℃/W - 典型反向恢复时间(Trr):2.5μs - 结温范围:-50至+150℃ - 存储温度范围:-50至+150℃

5. 功能详解 - 提供了最大正向电流、典型瞬时降额电流、典型瞬时正向特性、典型反向特性等图表。

6. 应用信息 - 该文档主要提供了器件的技术规格和特性,适用于需要高电流和高可靠性整流的应用。

7. 封装信息 - 封装为无空洞模塑塑料体,环氧树脂符合UL94V-0级阻燃标准,引脚为轴向可焊,极性由色带表示阴极端,可安装在任何位置,重量为2.1克,具体尺寸以英寸和毫米给出。
P600K 价格&库存

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