RBV1008

RBV1000 - RBV1010 PRV : 50 - 1000 Volts Io : 10 Amperes SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 FEATURES : * * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free + 13.5 ± 0.3 ~~ 11 ± 0.2 1.0 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * W eight : 7.97 grams ( Approximaly ) 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 5.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : SYMBOL RBV 1000 50 35 50 RBV 1001 100 70 100 RBV 1002 200 140 200 RBV 1004 400 280 400 10 300 160 1.0 10 200 2.5 RBV 1006 600 420 600 RBV 1008 800 560 800 17.5 ± 0.5 RBV 1010 1000 700 1000 UNIT V V V A A A 2S V µA µA °C/W °C °C VRRM VRMS VDC IF(AV) IFSM I2t VF IR IR(H) RθJC TJ TSTG Ta = 25 °C Ta = 100 °C - 40 to + 150 - 40 to + 150 1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate. Page 1 of 2 Rev. 03 : September 9, 2005 RATING AND CHARACTERISTIC CURVES ( RBV1000 - RBV1010 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 12 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 10 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES 250 8 200 TJ = 50 °C 6 150 4 HEAT-SINK MOUNTING, Tc 3.2" x 3.2" x 0.12" THK. (8.2cm x 8.2cm x 0.3cm) Al.-FINNED PLATE 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 2 50 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 10 Pulse Width = 300 µ s 1 % Duty Cycle 1.0 1.0 0.1 TJ = 25 °C TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 12 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : September 9, 2005