RBV2500D

RBV2500D - RBV2510D PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 + 13.5 ± 0.3 ~~ 11 ± 0.2 1.0 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * W eight : 8.17 grams ( Approximaly ) 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 25 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : SYMBOL RBV RBV RBV RBV RBV RBV RBV 2500D 2501D 2502D 2504D 2506D 2508D 2510D 50 35 50 100 70 100 200 140 200 400 280 400 25 400 375 1.1 10 200 1.2 - 40 to + 150 - 40 to + 150 600 420 600 800 560 800 1000 700 1000 17.5 ± 0.5 UNIT V V V A A A 2S V µA µA °C/W °C °C VRRM VRMS VDC IF(AV) IFSM I2 t VF IR IR(H) RθJC TJ TSTG Ta = 25 °C Ta = 100 °C 1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate Page 1 of 2 Rev. 03 : September 9, 2005 RATING AND CHARACTERISTIC CURVES ( RBV2500D - RBV2510D ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 30 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 25 250 20 200 TJ = 50 °C 15 150 10 HEAT-SINK MOUNTING, Tc 5" x 6" x 4.9" THK. (12.8cm x 15.2cm x 12.4cm) Al.-Finned plate 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 5 50 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 10 1.0 Pulse Width = 300 µ s 1 % Duty Cycle 1.0 0.1 TJ = 25 °C TJ = 25 °C 0.1 0.0 0 20 40 60 80 100 12 0 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : September 9, 2005