RBV5004

RBV5000 - RBV5010 PRV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation SILICON BRIDGE RECTIFIERS RBV25 C3 30 ± 0 .3 3.9 ± 0 .2 4.9 ± 0 .2 ∅ 3.2 ± 0 .1 20 ± 0.3 + 13.5 ± 0.3 ~~ 11 ± 0.2 1.0 ± 0 .1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 7.5 7.5 10 ±0.2 ±0.2 ±0.2 2.0 ± 0 .2 0.7 ± 0 .1 Dimensions in millimeters Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 25 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) RBV 5000 50 35 50 RBV 5001 100 70 100 RBV 5002 200 140 200 RBV 5004 400 280 400 50 RBV 5006 600 420 600 RBV 5008 800 560 800 17.5 ± 0.5 RBV 5010 1000 700 1000 UNIT Volts Volts Volts Amps. IFSM It VF IR IR(H) R θJC TJ TSTG 2 400 660 1.1 10 200 1.5 10 - 40 to + 150 Amps. A2S Volts µA µA °C/W °C °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : 1. Thermal Resistance from junction to case w ith units mounted on heatsink. UPDATE : AUGUST 3, 1998 RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 ) AVERAGE FORWARD OUTPUT CURRENT AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 60 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 600 50 500 40 400 TJ = 50 ° C 30 300 20 200 10 P.C. Board Mounted with SINE WAVE R-Load 0 0 25 50 75 100 125 150 175 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES TJ = 100 ° C 10 Pulse Width = 300 µ s 1 % Duty Cycle 1.0 1.0 0.1 TJ = 25 ° C TJ = 25 ° C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS