RBV610

www.eicsemi.com RBV600 - RBV610 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 6.0 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 FEATURES : Ф 3.2 ± 0.1 ~ ~ 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Rated isolation-voltage 2000 VAC Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free 13.5 ± 0.3 * * * * * * * * * 1.0 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.80 grams ( Approximaly ) 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL RBV 600 RBV 601 RBV 602 RBV 604 RBV 605 RBV 606 RBV 608 RBV 610 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 500 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 350 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 500 600 800 1000 V Maximum Average Forward Current Tc = 55°C IF(AV) 6.0 A IFSM 200 A 2 64 Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) It VF 1.0 A2S V IR 10 μA IR(H) 200 μA 8.0 °C/W Operating Junction Temperature Range RθJC TJ - 40 to + 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 3.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Notes : 1. Thermal Resistance from junction to case with units mounted on a 2.6"x1.4"x0.06" THK (6.5cm.x3.5cm.x0.15cm.) Al. Plate. Heatsink. Page 1 of 2 Rev. 06 : May 6, 2013 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( RBV600 - RBV610 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 240 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 6.0 5.0 4.0 3.0 2.0 HEAT-SINK MOUNTING, Tc 2.6" x 1.4" x 0.06" THK. (6.5cm x 3.5cm x 0.15cm) Al.-PLATE 1.0 0 0 25 50 75 100 125 150 200 TJ = 50 °C 160 120 80 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 40 0 175 1 CASE TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 4 6 10 20 40 60 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 10 100 TJ = 100 °C REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES 2 NUMBER OF CYCLES AT 60Hz 10 Pulse Width = 300 μs 1 % Duty Cycle 1.0 1.0 0.1 TJ = 25 °C TJ = 25 °C 0.1 0.0 0 20 40 60 80 10 12 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 06 : May 6, 2013