RBV806D

RBV800D - RBV810D PRV : 50 - 1000 Volts Io : 8.0 Amperes SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 FEATURES : * * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free + 13.5 ± 0.3 ~~ 11 ± 0.2 1.0 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * W eight : 7.97 grams ( Approximaly ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 8.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Typical Thermal Resistance at Junction to Ambient SYMBOL RBV 800D 50 35 50 RBV 801D 100 70 100 RBV 802D 200 140 200 RBV 804D 400 280 400 8.0 300 166 1.0 10 200 2.2 15 RBV 806D 600 420 600 RBV 808D 800 560 800 17.5 ± 0.5 RBV 810D 1000 700 1000 UNIT V V V A A A 2S V µA µA °C/W °C/W °C °C VRRM VRMS VDC IF(AV) IFSM I2t VF IR IR(H) RθJC RθJA TJ TSTG Ta = 25 °C Ta = 100 °C Operating Junction Temperature Range Storage Temperature Range - 40 to + 150 - 40 to + 150 Notes : 1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink. Page 1 of 2 Rev. 03 : September 9, 2005 RATING AND CHARACTERISTIC CURVES ( RBV800D - RBV810D ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 12 HEAT-SINK MOUNTING, 3.2" x 3.2" x 0.12" THK. (8.2cm x 8.2cm x 0.3cm) Al.-PLATE Tc = 50°C 8.0 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 300 AVERAGE FORWARD OUTPUT CURRENT AMPERES 10 250 200 TJ = 50 °C 6.0 150 4.0 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 2.0 50 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 10 Pulse Width = 300 µ s 1 % Duty Cycle 1.0 1.0 0.1 TJ = 25 °C TJ = 25 °C 0.1 0.0 0 20 40 60 80 100 12 0 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : September 9, 2005