RGP02-16E-T/R

www.eicsemi.com RGP02-12E // 20E FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PRV : 1200 - 2000 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * * Glass passivated junction High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free 1.00 (25.4) MIN. 0.108 (2.74) 0.078 (1.99) 0.205 (5.20) 0.161 (4.10) MECHANICAL DATA : 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Peak Forward Surge Current 8.3 ms. Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at 0.1 Amp. Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range VRRM VRMS VDC RGP02- RGP02- RGP02- RGP02- RGP0212E 14E 16E 18E 20E 1200 1400 1600 1800 2000 840 980 1120 1260 1400 1200 1400 1600 1800 2000 UNIT V V V IF(AV) 0.5 A IFSM VF A V IR 20 1.8 5.0 IR(H) 50 Trr CJ TJ TSTG 300 5.0 - 65 to + 150 - 65 to + 150 μA μA ns pf °C °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 03 : February 20, 2006 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( RGP02-12E - RGP02-20E ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω Trr 10 Ω + 0.5 D.U.T. + 0 PULSE GENERATOR ( NOTE 2 ) 50 Vdc (approx) 1Ω - 0.25 OSCILLOSCOPE ( NOTE 1 ) - 1.0 A SET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 1 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 25 0.5 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 0.4 0.3 0.2 0.1 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C 20 15 10 5 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 0 175 1 AMBIENT TEMPERATURE, ( °C) 1.0 Pulse Width = 300 μs 2% Duty Cycle TJ = 25 °C 0.1 0.01 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 FORWARD VOLTAGE, VOLTS Page 2 of 2 4 6 10 20 40 60 100 2.4 2.6 FIG.5 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES FIG.4 - TYPICAL FORWARD CHARACTERISTICS 0.001 0.6 2 NUMBER OF CYCLES AT 60Hz 10 TJ = 100 °C 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) Rev. 03 : February 20, 2006