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RGP02-18E

RGP02-18E

  • 厂商:

    EIC

  • 封装:

  • 描述:

    RGP02-18E - HIGH VOLTAGE - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
RGP02-18E 数据手册
RGP02-12E // 20E PRV : 1200 - 2000 Volts Io : 0.5 Ampere FEATURES : * * * * * * * * Glass passivated junction High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free HIGH VOLTAGE DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specifie. Single phase, half wave, 60 Hz, resistive or inductive load For capacitive load, derate current by 20% MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Peak Forward Surge Current 8.3 ms. Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at 0.1 Amp. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) RGP02- RGP02- RGP02- RGP02- RGP0212E 14E 16E 18E 20E 1200 840 1200 1400 980 1400 1600 1120 1600 0.5 1800 1260 1800 2000 1400 2000 UNIT V V V A IFSM VF IR IR(H) Trr CJ TJ TSTG 20 1.8 5.0 50 300 5.0 - 65 to + 150 - 65 to + 150 A V μA μA ns pf °C °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0DC Page 1 of 2 Rev. 03 : February 20, 2006 RATING AND CHARACTERISTIC CURVES ( RGP02-12E - RGP02-20E ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A SET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 0.5 25 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 0.4 20 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C 0.3 15 0.2 10 0.1 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 5 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES FIG.5 - TYPICAL REVERSE CHARACTERISTICS FORWARD CURRENT, AMPERES 1.0 Pulse Width = 300 μs 2% Duty Cycle TJ = 25 °C 0.1 10 TJ = 100 °C 1.0 0.01 0.1 TJ = 25 °C 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 03 : February 20, 2006
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